Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	610-611
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
Issue number	S2
DOIs	https://doi.org/10.1017/S1431927612004904
State	Published - Jul 2012

All Science Journal Classification (ASJC) codes

@article{cd731e17d63241718b4b2220181a0ffc,

title = "Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation",

author = "Hao Wang and Gray, {Jennifer L.}",

year = "2012",

month = jul,

doi = "10.1017/S1431927612004904",

language = "English (US)",

volume = "18",

pages = "610--611",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

number = "S2",

}

TY - JOUR

T1 - Fabication of GaN Islands at Specific Locations on Si Substrates using FIB Induced Ga Surface Precipitation and Plasma Nitridation

AU - Wang, Hao

AU - Gray, Jennifer L.

PY - 2012/7

Y1 - 2012/7

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U2 - 10.1017/S1431927612004904

DO - 10.1017/S1431927612004904

M3 - Article

AN - SCOPUS:85009643434

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SP - 610

EP - 611

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - S2

ER -