Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.

Original languageEnglish (US)
Title of host publication2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781467383974
StatePublished - Jan 1 2016
Event14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016 - Boise, United States
Duration: Apr 15 2016 → …

Publication series

Name2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016
Volume2016-January

Other

Other14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016
CountryUnited States
CityBoise
Period4/15/16 → …

Fingerprint

Thin film transistors
Fabrication
Substrates
Polyimides
Flexible electronics
Atomic layer deposition
Bending tests
Polymer films
Deposits
Electric fields
Plasmas
Degradation
Glass
Thin films
Testing
Processing
Temperature

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Li, H. U., & Jackson, T. N. (2016). Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. In 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016 (pp. 1-4). (2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016; Vol. 2016-January). Institute of Electrical and Electronics Engineers Inc..
Li, Haoyu U. ; Jackson, Thomas Nelson. / Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1-4 (2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016).
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abstract = "We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.",
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Li, HU & Jackson, TN 2016, Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. in 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016. 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016, vol. 2016-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 14th Annual IEEE Workshop on Microelectronics and Electron Devices, WMED 2016, Boise, United States, 4/15/16.

Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. / Li, Haoyu U.; Jackson, Thomas Nelson.

2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1-4 (2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016; Vol. 2016-January).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.

AB - We report flexible ZnO thin film transistors (TFTs) fabricated on 5 µm thick solution-cast polyimide substrate. Plasma enhanced atomic layer deposition (PEALD) was used to deposit Al2O3 dielectric and ZnO active layers respectively. The highest processing temperature was 200 °C. The flexible ZnO TFTs we fabricated have very similar characteristics to devices fabricated on glass substrates. Typical TFT mobility was greater than 12 cm2/V·s for a gate electric field of 2 MV/cm. Simple mechanical releasing can be used to detach the polyimide substrate from the rigid carrier. Device performance showed almost no degradation after releasing. Repeated bending test using homemade roller-flex testing apparatus was conducted. The flexible ZnO TFTs were repeatedly bent and flattened to a minimum radius of 1.6 mm for more than 10,000 cycles with little change in device characteristics. These results demonstrated solution-cast thin polymeric film as a simple but profound path to oxide semiconductor flexible electronics.

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Li HU, Jackson TN. Fabrication and characterization of flexible thin film transistors on thin solution-cast substrates. In 2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1-4. (2016 IEEE Workshop on Microelectronics and Electron Devices, WMED 2016).