Fabrication and characterization of green CdSe quantumn dot light emitting diodes with ZnO electron-transport layer

Wen Jun Zhang, Bao Cai Zhai, Jian Xu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

CdSe/ZnS core-shell QDs (523 nm) were used as emissive layers, poly-TPD as hole-transport layer (HTL) and ZnO as electron-transport layer(ETL). Green-emitting devices based on CdSe QDs were fabricated and characterized. Luminescence of semiconductor nanocrystal quantum dots (QDs) were used as luminescent centers in organic light emitting devices (OLEDs). By changing the size of QD, this OLED can emit visible to near-infrared spectrum with a narrow full-width at half-maximum (FWHM) of ~30 nm. However, the brightness, efficiency, and lifetime of LEDs need to be improved to meet the requirements of commercialization in the near future.

Original languageEnglish (US)
Pages (from-to)1171-1176
Number of pages6
JournalFaguang Xuebao/Chinese Journal of Luminescence
Volume33
Issue number11
DOIs
StatePublished - Nov 1 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Condensed Matter Physics

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