Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators

Wen Yi Lin, Rosario A. Gerhardt, Robert F. Speyer, Wesley S. Hackenberger, Thomas R. Shrout

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.

Original languageEnglish (US)
Pages (from-to)501-506
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume453
StatePublished - Jan 1 1997
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996

Fingerprint

Microwave resonators
schedules
agglomeration
Heating rate
Dielectric properties
dielectric properties
Q factors
Resonators
Solid solutions
liquid phases
Grain boundaries
heat treatment
Permittivity
Substitution reactions
solid solutions
Agglomeration
solubility
grain boundaries
Solubility
resonators

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lin, W. Y., Gerhardt, R. A., Speyer, R. F., Hackenberger, W. S., & Shrout, T. R. (1997). Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators. Materials Research Society Symposium - Proceedings, 453, 501-506.
Lin, Wen Yi ; Gerhardt, Rosario A. ; Speyer, Robert F. ; Hackenberger, Wesley S. ; Shrout, Thomas R. / Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 453. pp. 501-506.
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abstract = "The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82{\%}) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.",
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Lin, WY, Gerhardt, RA, Speyer, RF, Hackenberger, WS & Shrout, TR 1997, 'Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators', Materials Research Society Symposium - Proceedings, vol. 453, pp. 501-506.

Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators. / Lin, Wen Yi; Gerhardt, Rosario A.; Speyer, Robert F.; Hackenberger, Wesley S.; Shrout, Thomas R.

In: Materials Research Society Symposium - Proceedings, Vol. 453, 01.01.1997, p. 501-506.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Fabrication and dielectric properties of phase-pure Ba2Ti9O20 microwave resonators

AU - Lin, Wen Yi

AU - Gerhardt, Rosario A.

AU - Speyer, Robert F.

AU - Hackenberger, Wesley S.

AU - Shrout, Thomas R.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.

AB - The thermal processing schedules necessary to form phase pure Ba2Ti9O20, with and without substitutional solid solution were investigated. Undoped compositions formed the compound most easily under rapid (500 °C/min) heating rates, where diffusional agglomeration of the TiO2 batch constituent was minimized. The compound formed most easily with minor (0.82%) substitutions of SnO2 and ZrO2 for TiO2. The solubility of Sn in Ba2Ti9O20 was higher than that of Zr. Extended heat treatment (16 vs. 6 h at 1390 °C) resulted in volitalization of grain boundary liquid phase, leading to a more porous and slightly degraded resonators. The effects of dopant concentrations and soak periods at 1390 °C on dielectric constants and temperature-dependent quality factors are reported.

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