Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co

U. Tipparach, T. P. Chen, J. L. Wagner, K. Wu, Q. Y. Chen, Qi Li, J. T. Wang, H. C. Yang, H. E. Horng

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Abstract

We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

Original languageEnglish (US)
Pages (from-to)404-407
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume364-365
DOIs
StatePublished - Nov 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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    Tipparach, U., Chen, T. P., Wagner, J. L., Wu, K., Chen, Q. Y., Li, Q., Wang, J. T., Yang, H. C., & Horng, H. E. (2001). Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co. Physica C: Superconductivity and its applications, 364-365, 404-407. https://doi.org/10.1016/S0921-4534(01)00807-3