Fabrication and transport studies on PrBa2(Cu1-xMx)3O7

M = Ga, Zn, and Co

U. Tipparach, T. P. Chen, J. L. Wagner, K. Wu, Q. Y. Chen, Qi Li, J. T. Wang, H. C. Yang, H. E. Horng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

Original languageEnglish (US)
Pages (from-to)404-407
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume364-365
DOIs
StatePublished - Nov 1 2001

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Doping (additives)
Fabrication
fabrication
Buffer layers
Lattice constants
Phase transitions
Networks (circuits)
lattice parameters
buffers
electrical resistivity
electronics
barium copper yttrium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Tipparach, U. ; Chen, T. P. ; Wagner, J. L. ; Wu, K. ; Chen, Q. Y. ; Li, Qi ; Wang, J. T. ; Yang, H. C. ; Horng, H. E. / Fabrication and transport studies on PrBa2(Cu1-xMx)3O7 : M = Ga, Zn, and Co. In: Physica C: Superconductivity and its applications. 2001 ; Vol. 364-365. pp. 404-407.
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abstract = "We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20{\%} level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.",
author = "U. Tipparach and Chen, {T. P.} and Wagner, {J. L.} and K. Wu and Chen, {Q. Y.} and Qi Li and Wang, {J. T.} and Yang, {H. C.} and Horng, {H. E.}",
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Tipparach, U, Chen, TP, Wagner, JL, Wu, K, Chen, QY, Li, Q, Wang, JT, Yang, HC & Horng, HE 2001, 'Fabrication and transport studies on PrBa2(Cu1-xMx)3O7: M = Ga, Zn, and Co', Physica C: Superconductivity and its applications, vol. 364-365, pp. 404-407. https://doi.org/10.1016/S0921-4534(01)00807-3

Fabrication and transport studies on PrBa2(Cu1-xMx)3O7 : M = Ga, Zn, and Co. / Tipparach, U.; Chen, T. P.; Wagner, J. L.; Wu, K.; Chen, Q. Y.; Li, Qi; Wang, J. T.; Yang, H. C.; Horng, H. E.

In: Physica C: Superconductivity and its applications, Vol. 364-365, 01.11.2001, p. 404-407.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and transport studies on PrBa2(Cu1-xMx)3O7

T2 - M = Ga, Zn, and Co

AU - Tipparach, U.

AU - Chen, T. P.

AU - Wagner, J. L.

AU - Wu, K.

AU - Chen, Q. Y.

AU - Li, Qi

AU - Wang, J. T.

AU - Yang, H. C.

AU - Horng, H. E.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

AB - We have fabricated M-doped PrBa2Cu3O7 (Pr123), i.e. PrBa2(Cu1-xMx)3O7 for M = Zn, Ga, and Co, with x = 0.05, 0.10, 0.15, and 0.20. Experimental data indicates single phase samples for the Ga and Co doping up to 20% level. Second phases appear in Zn-doped samples when the doping level reaches 0.15. At 77 K the electrical resistivity of these compounds is several orders of magnitude higher than that of undoped Pr123. We also found no orthorhombic to tetragonal phase transition in the doped samples with all samples remaining in orthorhombic. Their lattices parameters are very close to those of YBa2Cu3O7-δ (Y123). For this reason these compounds may serve as improved buffer-layer materials for Y123 superconducting electronic circuits and devices.

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