Abstract
A gallium focused ion beam (FIB) has been used to implant Ga at specific sites on the surface of undoped Si(001) substrates. Upon annealing at 600°C, discrete nanoscale surface islands form within the FIB patterned regions when the total Ga ion dose, or fluence, is greater than 1.0 × 10 16ionscm- 2. The number of islands depends on the size of the irradiated region and a single island can be achieved for a FIB milled region that is 100nm × 100nm. The average sizes of the islands were found to range from 24.5nm when exposed to a total ion dose of 1.2 × 10 16ionscm- 2 to 45nm for a dose of 3.0 × 10 16ionscm- 2. We have confirmed that these surface islands are metallic Ga by performing a selective chemical etch that removes the islands and by transmission electron microscopy characterization. These patterned Ga surface templates could serve as nucleation sites for the lateral arrangement of discrete quantum dot structures.
| Original language | English (US) |
|---|---|
| Article number | 425602 |
| Journal | Nanotechnology |
| Volume | 22 |
| Issue number | 42 |
| DOIs | |
| State | Published - Oct 21 2011 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
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Fabrication of discrete gallium nanoislands on the surface of a Si(001) substrate using a focused ion beam. / Wang, Hao; Gray, Jennifer Lynn.
In: Nanotechnology, Vol. 22, No. 42, 425602, 21.10.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of discrete gallium nanoislands on the surface of a Si(001) substrate using a focused ion beam
AU - Wang, Hao
AU - Gray, Jennifer Lynn
PY - 2011/10/21
Y1 - 2011/10/21
N2 - A gallium focused ion beam (FIB) has been used to implant Ga at specific sites on the surface of undoped Si(001) substrates. Upon annealing at 600°C, discrete nanoscale surface islands form within the FIB patterned regions when the total Ga ion dose, or fluence, is greater than 1.0 × 10 16ionscm- 2. The number of islands depends on the size of the irradiated region and a single island can be achieved for a FIB milled region that is 100nm × 100nm. The average sizes of the islands were found to range from 24.5nm when exposed to a total ion dose of 1.2 × 10 16ionscm- 2 to 45nm for a dose of 3.0 × 10 16ionscm- 2. We have confirmed that these surface islands are metallic Ga by performing a selective chemical etch that removes the islands and by transmission electron microscopy characterization. These patterned Ga surface templates could serve as nucleation sites for the lateral arrangement of discrete quantum dot structures.
AB - A gallium focused ion beam (FIB) has been used to implant Ga at specific sites on the surface of undoped Si(001) substrates. Upon annealing at 600°C, discrete nanoscale surface islands form within the FIB patterned regions when the total Ga ion dose, or fluence, is greater than 1.0 × 10 16ionscm- 2. The number of islands depends on the size of the irradiated region and a single island can be achieved for a FIB milled region that is 100nm × 100nm. The average sizes of the islands were found to range from 24.5nm when exposed to a total ion dose of 1.2 × 10 16ionscm- 2 to 45nm for a dose of 3.0 × 10 16ionscm- 2. We have confirmed that these surface islands are metallic Ga by performing a selective chemical etch that removes the islands and by transmission electron microscopy characterization. These patterned Ga surface templates could serve as nucleation sites for the lateral arrangement of discrete quantum dot structures.
UR - http://www.scopus.com/inward/record.url?scp=80053264052&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053264052&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/22/42/425602
DO - 10.1088/0957-4484/22/42/425602
M3 - Article
C2 - 21941032
AN - SCOPUS:80053264052
VL - 22
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 42
M1 - 425602
ER -