The ferroelectric properties of flexible devices based on 0.05Pb(Al 0.5Nb 0.5)O 3-0.95Pb(Zr 0.52Ti 0.48)O 3 + 0.7 wt.%Nb 2O 5 + 0.5 wt.%MnO 2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering