Fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO3 for the next generation of integrated optoelectronic devices by focused ion beams (FIB)

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    Abstract

    The fabrication of high-aspect-ratio submicron-to-nanometer range microstructures in LiNbO3 using a state-of-the-art Schlumberger AMS 3000 focused ion-beam (FIB) system is presented. The submicron structures with about 330 nm width and 1600 nm depth are fabricated by employing XeF2 gas-assisted gallium ion-beam etching with 50 pA of ion-beam current. A variety of optoelectronic devices such as microsensors, directional couplers, extremely compact electro-optic modulators, and wavelength filters could be built based on this type of high-aspect-ratio submicron structure in LiNbO3, which may lead to the next generation of integrated optoelectronic devices that have higher levels of device integration and enhanced functionality.

    Original languageEnglish (US)
    Pages (from-to)396-398
    Number of pages3
    JournalMicrowave and Optical Technology Letters
    Volume22
    Issue number6
    DOIs
    Publication statusPublished - Jan 1 1999

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    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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