Fabrication of n-doped magnetic semiconductor heterostructures

I. Smorchkova, N. Samarth

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

We demonstrate the introduction of high carrier densities into two and three-dimensional magnetic semiconductor heterostructures that contain large local concentrations of magnetic moments. The use of (ZnSe)m-f(MnSe)f digital alloys readily allows the fabrication of epilayer samples of moderate Mn composition with carrier concentrations up to ∼ 1019 cm-3. Modulation doping of ZnSe/Zn1-x-yCdyMnxSe quantum wells enables the fabrication of a 2-D electron gas confined within the magnetic region with sheet concentrations up to ∼6X1011 cm-2.

Original languageEnglish (US)
Pages (from-to)1640-1642
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number11
DOIs
StatePublished - Sep 9 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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