Fabrication of smooth GaN-based laser facets

D. A. Stocker, E. F. Schubert, K. S. Boutros, Joan Marie Redwing

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H 3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
StatePublished - Dec 1 1999

Fingerprint

Wet etching
Fabrication
Lasers
Etching
Hydroxides
Electrochemical etching
Aluminum Oxide
Laser resonators
Sapphire
Electron microscopes
Surface roughness
Scanning

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Stocker, D. A. ; Schubert, E. F. ; Boutros, K. S. ; Redwing, Joan Marie. / Fabrication of smooth GaN-based laser facets. In: MRS Internet Journal of Nitride Semiconductor Research. 1999 ; Vol. 4, No. SUPPL. 1.
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Fabrication of smooth GaN-based laser facets. / Stocker, D. A.; Schubert, E. F.; Boutros, K. S.; Redwing, Joan Marie.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. SUPPL. 1, 01.12.1999.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of smooth GaN-based laser facets

AU - Stocker, D. A.

AU - Schubert, E. F.

AU - Boutros, K. S.

AU - Redwing, Joan Marie

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Y1 - 1999/12/1

N2 - A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H 3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

AB - A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H 3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

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