TY - JOUR
T1 - Fabrication of smooth GaN-based laser facets
AU - Stocker, D. A.
AU - Schubert, E. F.
AU - Boutros, K. S.
AU - Redwing, J. M.
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1999
Y1 - 1999
N2 - A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.
AB - A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.
UR - http://www.scopus.com/inward/record.url?scp=2442632097&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2442632097&partnerID=8YFLogxK
U2 - 10.1557/s1092578300003446
DO - 10.1557/s1092578300003446
M3 - Article
AN - SCOPUS:2442632097
VL - 4
SP - 6d
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
SN - 1092-5783
IS - SUPPL. 1
ER -