Abstract
A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H 3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.
| Original language | English (US) |
|---|---|
| Journal | MRS Internet Journal of Nitride Semiconductor Research |
| Volume | 4 |
| Issue number | SUPPL. 1 |
| State | Published - Dec 1 1999 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Fabrication of smooth GaN-based laser facets. / Stocker, D. A.; Schubert, E. F.; Boutros, K. S.; Redwing, Joan Marie.
In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 4, No. SUPPL. 1, 01.12.1999.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of smooth GaN-based laser facets
AU - Stocker, D. A.
AU - Schubert, E. F.
AU - Boutros, K. S.
AU - Redwing, Joan Marie
PY - 1999/12/1
Y1 - 1999/12/1
N2 - A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H 3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.
AB - A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H 3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.
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M3 - Article
VL - 4
JO - MRS Internet Journal of Nitride Semiconductor Research
JF - MRS Internet Journal of Nitride Semiconductor Research
SN - 1092-5783
IS - SUPPL. 1
ER -