Fabrication of smooth GaN-based laser facets

D. A. Stocker, E. F. Schubert, K. S. Boutros, J. M. Redwing

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using photoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO 4 and various hydroxides, with etch rates as high as 3.2 μm/min. The crystallographic GaN etch planes are {0001}, {101̄0}, {101̄1̄}, {101̄2̄}, and {101̄3}. The vertical {101̄0} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

Original languageEnglish (US)
Pages (from-to)6d
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
DOIs
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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