Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions

C. L. Trivelpiece; J. S. Brenizer; C. G. Pantano

doi:10.1117/12.860624

Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions

C. L. Trivelpiece, J. S. Brenizer, C. G. Pantano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Thin, free-standing boro-phosphosilicate glass (BPSG) films (<1.5 μm thick, 10 - 20 mm²) were fabricated (PSU NSF - NNIN Site) to serve as neutron converting media for a proposed high-resolution neutron imaging system capable of submicron sample imaging. The B and P concentration in the BPSG films was 4.5 and 3.5 w%, respectively, measured by ICP-OES. Silicon nitride (Si ₃N₄) was deposited on both sides of the wafer to act as an etch mask and a protective layer over the BPSG. The bulk wafer stress induced by the lower expansion Si₃N₄ and BPSG layers was ∼90 MPa (tensile). The Si substrate was removed from the photolithography-patterned areas via wet etch in KOH:DI H₂O (45:55) solution at 100°C so that the exposed areas consisted of free-standing Si₃N ₄/BPSG/Si₃N₄ stacked windows. The Si ₃N₄ was removed via MERIE from the windows. NDP of the processed films showed that the boron concentration was constant and uniform throughout the exposed BPSG film. Visual observations of the free-standing windows showed long-range spatial deformation of the films in terms of "waves" caused by stress gradients, which were observed near the edges of the windows using optical birefringence. An annealing schedule was implemented to determine if the glass film deformation was caused by residual stress in the as-deposited film. Preliminary results of these experiments imply another mechanism is responsible for the deformation of the free-standing films. This work will review the processing techniques used in film fabrication and present the results of the thermal treatments of the thin, free-standing BPSG films.

Original language	English (US)
Title of host publication	Nanoengineering
Subtitle of host publication	Fabrication, Properties, Optics, and Devices VII
DOIs	https://doi.org/10.1117/12.860624
State	Published - 2010
Event	Nanoengineering: Fabrication, Properties, Optics, and Devices VII - San Diego, CA, United States Duration: Aug 3 2010 → Aug 4 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7764
ISSN (Print)	0277-786X

Other

Other	Nanoengineering: Fabrication, Properties, Optics, and Devices VII
Country/Territory	United States
City	San Diego, CA
Period	8/3/10 → 8/4/10

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.860624

Cite this

Trivelpiece, C. L., Brenizer, J. S., & Pantano, C. G. (2010). Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions. In Nanoengineering: Fabrication, Properties, Optics, and Devices VII [77640G] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7764). https://doi.org/10.1117/12.860624

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title = "Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions",

abstract = "Thin, free-standing boro-phosphosilicate glass (BPSG) films (<1.5 μm thick, 10 - 20 mm2) were fabricated (PSU NSF - NNIN Site) to serve as neutron converting media for a proposed high-resolution neutron imaging system capable of submicron sample imaging. The B and P concentration in the BPSG films was 4.5 and 3.5 w%, respectively, measured by ICP-OES. Silicon nitride (Si 3N4) was deposited on both sides of the wafer to act as an etch mask and a protective layer over the BPSG. The bulk wafer stress induced by the lower expansion Si3N4 and BPSG layers was ∼90 MPa (tensile). The Si substrate was removed from the photolithography-patterned areas via wet etch in KOH:DI H2O (45:55) solution at 100°C so that the exposed areas consisted of free-standing Si3N 4/BPSG/Si3N4 stacked windows. The Si 3N4 was removed via MERIE from the windows. NDP of the processed films showed that the boron concentration was constant and uniform throughout the exposed BPSG film. Visual observations of the free-standing windows showed long-range spatial deformation of the films in terms of {"}waves{"} caused by stress gradients, which were observed near the edges of the windows using optical birefringence. An annealing schedule was implemented to determine if the glass film deformation was caused by residual stress in the as-deposited film. Preliminary results of these experiments imply another mechanism is responsible for the deformation of the free-standing films. This work will review the processing techniques used in film fabrication and present the results of the thermal treatments of the thin, free-standing BPSG films.",

author = "Trivelpiece, {C. L.} and Brenizer, {J. S.} and Pantano, {C. G.}",

year = "2010",

doi = "10.1117/12.860624",

language = "English (US)",

isbn = "9780819482600",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Nanoengineering",

note = "Nanoengineering: Fabrication, Properties, Optics, and Devices VII ; Conference date: 03-08-2010 Through 04-08-2010",

}

Trivelpiece, CL, Brenizer, JS & Pantano, CG 2010, Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions. in Nanoengineering: Fabrication, Properties, Optics, and Devices VII., 77640G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7764, Nanoengineering: Fabrication, Properties, Optics, and Devices VII, San Diego, CA, United States, 8/3/10. https://doi.org/10.1117/12.860624

Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions. / Trivelpiece, C. L.; Brenizer, J. S.; Pantano, C. G.
Nanoengineering: Fabrication, Properties, Optics, and Devices VII. 2010. 77640G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7764).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Trivelpiece, C. L.

AU - Brenizer, J. S.

AU - Pantano, C. G.

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N2 - Thin, free-standing boro-phosphosilicate glass (BPSG) films (<1.5 μm thick, 10 - 20 mm2) were fabricated (PSU NSF - NNIN Site) to serve as neutron converting media for a proposed high-resolution neutron imaging system capable of submicron sample imaging. The B and P concentration in the BPSG films was 4.5 and 3.5 w%, respectively, measured by ICP-OES. Silicon nitride (Si 3N4) was deposited on both sides of the wafer to act as an etch mask and a protective layer over the BPSG. The bulk wafer stress induced by the lower expansion Si3N4 and BPSG layers was ∼90 MPa (tensile). The Si substrate was removed from the photolithography-patterned areas via wet etch in KOH:DI H2O (45:55) solution at 100°C so that the exposed areas consisted of free-standing Si3N 4/BPSG/Si3N4 stacked windows. The Si 3N4 was removed via MERIE from the windows. NDP of the processed films showed that the boron concentration was constant and uniform throughout the exposed BPSG film. Visual observations of the free-standing windows showed long-range spatial deformation of the films in terms of "waves" caused by stress gradients, which were observed near the edges of the windows using optical birefringence. An annealing schedule was implemented to determine if the glass film deformation was caused by residual stress in the as-deposited film. Preliminary results of these experiments imply another mechanism is responsible for the deformation of the free-standing films. This work will review the processing techniques used in film fabrication and present the results of the thermal treatments of the thin, free-standing BPSG films.

AB - Thin, free-standing boro-phosphosilicate glass (BPSG) films (<1.5 μm thick, 10 - 20 mm2) were fabricated (PSU NSF - NNIN Site) to serve as neutron converting media for a proposed high-resolution neutron imaging system capable of submicron sample imaging. The B and P concentration in the BPSG films was 4.5 and 3.5 w%, respectively, measured by ICP-OES. Silicon nitride (Si 3N4) was deposited on both sides of the wafer to act as an etch mask and a protective layer over the BPSG. The bulk wafer stress induced by the lower expansion Si3N4 and BPSG layers was ∼90 MPa (tensile). The Si substrate was removed from the photolithography-patterned areas via wet etch in KOH:DI H2O (45:55) solution at 100°C so that the exposed areas consisted of free-standing Si3N 4/BPSG/Si3N4 stacked windows. The Si 3N4 was removed via MERIE from the windows. NDP of the processed films showed that the boron concentration was constant and uniform throughout the exposed BPSG film. Visual observations of the free-standing windows showed long-range spatial deformation of the films in terms of "waves" caused by stress gradients, which were observed near the edges of the windows using optical birefringence. An annealing schedule was implemented to determine if the glass film deformation was caused by residual stress in the as-deposited film. Preliminary results of these experiments imply another mechanism is responsible for the deformation of the free-standing films. This work will review the processing techniques used in film fabrication and present the results of the thermal treatments of the thin, free-standing BPSG films.

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M3 - Conference contribution

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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T2 - Nanoengineering: Fabrication, Properties, Optics, and Devices VII

Y2 - 3 August 2010 through 4 August 2010

ER -

Fabrication of thin, free-standing BPSG films for metrological methods utilizing neutron-induced nuclear reactions

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