Facet roughness analysis for InGaN/GaN lasers with cleaved facets

D. A. Stocker, E. F. Schubert, W. Grieshaber, K. S. Boutros, J. M. Redwing

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Atomic force microscope images reveal a root-mean-square roughness Δd=16nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e-16π2(nΔd/λ0)2, where n is the refractive index of the semiconductor and λ0 is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV.

Original languageEnglish (US)
Pages (from-to)1925-1927
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Stocker, D. A., Schubert, E. F., Grieshaber, W., Boutros, K. S., & Redwing, J. M. (1998). Facet roughness analysis for InGaN/GaN lasers with cleaved facets. Applied Physics Letters, 73(14), 1925-1927. https://doi.org/10.1063/1.122172