TY - JOUR
T1 - Facile Electrochemical Synthesis of 2D Monolayers for High-Performance Thin-Film Transistors
AU - Schulman, Daniel S.
AU - Sebastian, Amritanand
AU - Buzzell, Drew
AU - Huang, Yu Ting
AU - Arnold, Andrew J.
AU - Das, Saptarshi
N1 - Funding Information:
The work of D.S.S. and S.D. was partially supported through grant no. ECCS-1640020 from National Science Foundation (NSF) and contract no. 2016-NE-2699 from Semiconductor Research Corporation. The work of A.S. and D.B. was partially supported through grant no. W911NF-17-1-0324 from Army Research Office (ARO). The work of A.J.A. was partially supported through grant no. FA9550-17-1-0018 from Air Force Office of Scientific Research (AFOSR) through the Young Investigator Program. The authors would like to thank Fu Zhang for assisting with the film transfer process. The authors would also like to acknowledge the technical staff members at the Material Research Institute at Penn State University.
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/12/27
Y1 - 2017/12/27
N2 - In this paper, we report high-performance monolayer thin-film transistors (TFTs) based on a variety of two-dimensional layered semiconductors such as MoS2, WS2, and MoSe2 which were obtained from their corresponding bulk counterparts via an anomalous but high-yield and low-cost electrochemical corrosion process, also referred to as electro-ablation (EA), at room temperature. These monolayer TFTs demonstrated current ON-OFF ratios in excess of 107 along with ON currents of 120 μA/μm for MoS2, 40 μA/μm for WS2, and 40 μA/μm for MoSe2 which clearly outperform the existing TFT technologies. We found that these monolayers have larger Schottky barriers for electron injection compared to their multilayer counterparts, which is partially compensated by their superior electrostatics and ultra-thin tunnel barriers. We observed an Anderson type semiconductor-to-metal transition in these monolayers and also discussed possible scattering mechanisms that manifest in the temperature dependence of the electron mobility. Finally, our study suggests superior chemical stability and electronic integrity of monolayers even after being exposed to extreme electro-oxidation and corrosion processes which is promising for the implementation of such TFTs in harsh environment sensing. Overall, the EA process proves to be a facile synthesis route offering higher monolayer yields than mechanical exfoliation and lower cost and complexity than chemical vapor deposition methods.
AB - In this paper, we report high-performance monolayer thin-film transistors (TFTs) based on a variety of two-dimensional layered semiconductors such as MoS2, WS2, and MoSe2 which were obtained from their corresponding bulk counterparts via an anomalous but high-yield and low-cost electrochemical corrosion process, also referred to as electro-ablation (EA), at room temperature. These monolayer TFTs demonstrated current ON-OFF ratios in excess of 107 along with ON currents of 120 μA/μm for MoS2, 40 μA/μm for WS2, and 40 μA/μm for MoSe2 which clearly outperform the existing TFT technologies. We found that these monolayers have larger Schottky barriers for electron injection compared to their multilayer counterparts, which is partially compensated by their superior electrostatics and ultra-thin tunnel barriers. We observed an Anderson type semiconductor-to-metal transition in these monolayers and also discussed possible scattering mechanisms that manifest in the temperature dependence of the electron mobility. Finally, our study suggests superior chemical stability and electronic integrity of monolayers even after being exposed to extreme electro-oxidation and corrosion processes which is promising for the implementation of such TFTs in harsh environment sensing. Overall, the EA process proves to be a facile synthesis route offering higher monolayer yields than mechanical exfoliation and lower cost and complexity than chemical vapor deposition methods.
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U2 - 10.1021/acsami.7b14711
DO - 10.1021/acsami.7b14711
M3 - Article
C2 - 29210272
AN - SCOPUS:85040031253
VL - 9
SP - 44617
EP - 44624
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 51
ER -