Fast organic thin-film transistor circuits

Hagen Klauk, David J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journalArticle

163 Scopus citations

Abstract

We have fabricated organic thin-film transistors and integrated circuits using pentacene as the active material. Devices were fabricated on glass substrates using low-temperature ion-beam sputtered silicon dioxide as the gate dielectric and a double-layer photoresist process to isolate devices. These transistors have carrier mobility near 0.5 cm2/V-s and on/off current ratio larger than 107. Using a level-shifting design that allows circuits to operate over a wide range of threshold voltages, we have fabricated ring oscillators with propagation delay below 75 μs per stage, limited by the level-shifting circuitry. When driven directly, inverters without level shifting show submicrosecond rise and fall time constants.

Original languageEnglish (US)
Pages (from-to)289-291
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number6
DOIs
StatePublished - Jun 1 1999

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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