Fast, simple ZnO/organic CMOS integrated circuits

Devin A. Mourey, Sung Kyu Park, Dalong A. Zhao, Jie Sun, Yuanyuan V. Li, Sankar Subramanian, Shelby F. Nelson, David H. Levy, John E. Anthony, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Hybrid organic-inorganic CMOS thin-film circuits are a simple, potentially low-cost, approach for large-area, low-power microelectronic applications. We have used atmospheric pressure processes to deposit inorganic ZnO and organic diF TES-ADT semiconductor layers and an Al2O3 gate dielectric. The organic semiconductor uses a contact-treatment-related microstructure that allows circuits to operate without directly patterning the organic layer. Using a simple 4-mask process with bifunctional Ti/Au contacts for both ZnO and organic transistors, 7-stage ring oscillators were fabricated and operated at >500 kHz corresponding to a propagation delay of <150 ns/stage at a supply bias of 35 V. These are the fastest organic-inorganic CMOS circuits reported to date.

Original languageEnglish (US)
Pages (from-to)1632-1635
Number of pages4
JournalOrganic Electronics
Volume10
Issue number8
DOIs
StatePublished - Dec 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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