Feedback control of plasma etching reactors for improved etching uniformity

Antonios Armaou, James Baker, Panagiotis D. Christofides

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This work focuses on the design and implementation of a feedback control system on a parallel electrode plasma etching (PE) process with showerhead arrangement used to etch a 500 A amorphous silicon thin film on a 4 in wafer. The feedback control system consists of three spatially distributed proportional integral controllers that use measurements of the etching rate at three locations across the wafer to manipulate the inlet concentration of carbon tetrafluoride in the showerhead. The controller is implemented on a detailed fundamental model of the process, which accounts for diffusive and convective mass transfer, bulk and surface reactions, and non-uniform fluid flow and plasma electron density profiles, and is shown to reduce the etching rate nonuniformity from 30.2% to 3.8%.

Original languageEnglish (US)
Pages (from-to)1467-1475
Number of pages9
JournalChemical Engineering Science
Volume56
Issue number4
DOIs
StatePublished - Mar 19 2001

Fingerprint

Plasma etching
Feedback control
Etching
Control systems
Controllers
Surface reactions
Amorphous silicon
Carrier concentration
Flow of fluids
Mass transfer
Plasmas
Thin films
Electrodes
Carbon
carbon tetrafluoride

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)

Cite this

Armaou, Antonios ; Baker, James ; Christofides, Panagiotis D. / Feedback control of plasma etching reactors for improved etching uniformity. In: Chemical Engineering Science. 2001 ; Vol. 56, No. 4. pp. 1467-1475.
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Feedback control of plasma etching reactors for improved etching uniformity. / Armaou, Antonios; Baker, James; Christofides, Panagiotis D.

In: Chemical Engineering Science, Vol. 56, No. 4, 19.03.2001, p. 1467-1475.

Research output: Contribution to journalArticle

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