Fermi-level pinning by misfit dislocations at GaAs interfaces

J. M. Woodall, G. D. Pettit, T. N. Jackson, C. Lanza, K. L. Kavanagh, J. W. Mayer

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Abstract

Fermi-level pinning by misfit dislocations at GaAs interfaces has been investigated. n+-GaInAs was used to control the misfit dislocation density by varying of composition and epilayer thickness. Interfaces with zero or low dislocation densities are Ohmic to current flow, and become rectifying with increasing dislocation density. The "Schottky barrier height" increases with dislocation density in accordance with a simple physical model which assumes Fermi-level pinning at the dislocation.

Original languageEnglish (US)
Pages (from-to)1783-1786
Number of pages4
JournalPhysical Review Letters
Volume51
Issue number19
DOIs
StatePublished - Jan 1 1983

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Woodall, J. M., Pettit, G. D., Jackson, T. N., Lanza, C., Kavanagh, K. L., & Mayer, J. W. (1983). Fermi-level pinning by misfit dislocations at GaAs interfaces. Physical Review Letters, 51(19), 1783-1786. https://doi.org/10.1103/PhysRevLett.51.1783