Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric

A. Ali, H. S. Madan, A. P. Kirk, R. M. Wallace, D. A. Zhao, D. A. Mourey, M. Hudait, Thomas Nelson Jackson, B. R. Bennett, J. B. Boos, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Number of pages2
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other68th Device Research Conference, DRC 2010
Country/TerritoryUnited States
CityNotre Dame, IN

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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