Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric

A. Ali, H. S. Madan, A. P. Kirk, R. M. Wallace, D. A. Zhao, D. A. Mourey, M. Hudait, Thomas Nelson Jackson, B. R. Bennett, J. B. Boos, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Pages27-28
Number of pages2
DOIs
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period6/21/106/23/10

Fingerprint

Fermi level
High electron mobility transistors
Arsenic
Plasmas
Electron transport properties
MOS capacitors
Electric potential
Surface chemistry
Passivation
Capacitance
X ray photoelectron spectroscopy
Spectroscopy
Semiconductor materials
Oxidation
Electrons

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ali, A., Madan, H. S., Kirk, A. P., Wallace, R. M., Zhao, D. A., Mourey, D. A., ... Datta, S. (2010). Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric. In 68th Device Research Conference, DRC 2010 (pp. 27-28). [5551954] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551954
Ali, A. ; Madan, H. S. ; Kirk, A. P. ; Wallace, R. M. ; Zhao, D. A. ; Mourey, D. A. ; Hudait, M. ; Jackson, Thomas Nelson ; Bennett, B. R. ; Boos, J. B. ; Datta, S. / Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric. 68th Device Research Conference, DRC 2010. 2010. pp. 27-28 (Device Research Conference - Conference Digest, DRC).
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Ali, A, Madan, HS, Kirk, AP, Wallace, RM, Zhao, DA, Mourey, DA, Hudait, M, Jackson, TN, Bennett, BR, Boos, JB & Datta, S 2010, Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric. in 68th Device Research Conference, DRC 2010., 5551954, Device Research Conference - Conference Digest, DRC, pp. 27-28, 68th Device Research Conference, DRC 2010, Notre Dame, IN, United States, 6/21/10. https://doi.org/10.1109/DRC.2010.5551954

Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric. / Ali, A.; Madan, H. S.; Kirk, A. P.; Wallace, R. M.; Zhao, D. A.; Mourey, D. A.; Hudait, M.; Jackson, Thomas Nelson; Bennett, B. R.; Boos, J. B.; Datta, S.

68th Device Research Conference, DRC 2010. 2010. p. 27-28 5551954 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric

AU - Ali, A.

AU - Madan, H. S.

AU - Kirk, A. P.

AU - Wallace, R. M.

AU - Zhao, D. A.

AU - Mourey, D. A.

AU - Hudait, M.

AU - Jackson, Thomas Nelson

AU - Bennett, B. R.

AU - Boos, J. B.

AU - Datta, S.

PY - 2010/10/11

Y1 - 2010/10/11

N2 - Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.

AB - Antimonide based compound semiconductors have gained considerable interest in recent years due to their superior electron and hole transport properties [1-3]. Among the various high mobility material systems (Fig. 1), arsenic-antimonide based MOS-HEMTs have great potential to enable complementary logic operation at low supply voltage. Integrating a high quality dielectric is key to demonstrating a scalable arsenic-antimonide MOS-HEMT architecture for 15 nm logic technology node and beyond. It is hypothesized that an ultra-thin GaSb surface layer is more favorable toward high-Κ integration than In 0.2Al0.8Sb barrier as it avoids Al at the interface and the associated surface oxidation. Here, we study the effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectric. We demonstrate for the first time, unpinned Fermi level in GaSb MOS system with high-Κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.

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U2 - 10.1109/DRC.2010.5551954

DO - 10.1109/DRC.2010.5551954

M3 - Conference contribution

AN - SCOPUS:77957595744

SN - 9781424478705

T3 - Device Research Conference - Conference Digest, DRC

SP - 27

EP - 28

BT - 68th Device Research Conference, DRC 2010

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Ali A, Madan HS, Kirk AP, Wallace RM, Zhao DA, Mourey DA et al. Fermi level unpinning of GaSb(100) using plasma enhanced ALD Al 2O3 dielectric. In 68th Device Research Conference, DRC 2010. 2010. p. 27-28. 5551954. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2010.5551954