Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals

Y. Hwang, Roman Engel-Herbert, N. G. Rudawski, S. Stemmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Materials 8
Pages117-121
Number of pages5
Edition3
DOIs
StatePublished - Dec 1 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hwang, Y., Engel-Herbert, R., Rudawski, N. G., & Stemmer, S. (2010). Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals. In Physics and Technology of High-k Materials 8 (3 ed., pp. 117-121). (ECS Transactions; Vol. 33, No. 3). https://doi.org/10.1149/1.3481598