@inproceedings{1440598a277d4b09b1148c5c6f6d4e79,
title = "Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals",
abstract = "The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.",
author = "Y. Hwang and R. Engel-Herbert and Rudawski, {N. G.} and S. Stemmer",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481598",
language = "English (US)",
isbn = "9781566778220",
series = "ECS Transactions",
number = "3",
pages = "117--121",
booktitle = "Physics and Technology of High-k Materials 8",
edition = "3",
note = "8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}