Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals

Y. Hwang, Roman Engel-Herbert, N. G. Rudawski, S. Stemmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Materials 8
Pages117-121
Number of pages5
Edition3
DOIs
StatePublished - Dec 1 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

Fingerprint

Fermi level
Electric properties
Capacitors
Annealing
Nitrogen
Hydrogen
Metals
Gases
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hwang, Y., Engel-Herbert, R., Rudawski, N. G., & Stemmer, S. (2010). Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals. In Physics and Technology of High-k Materials 8 (3 ed., pp. 117-121). (ECS Transactions; Vol. 33, No. 3). https://doi.org/10.1149/1.3481598
Hwang, Y. ; Engel-Herbert, Roman ; Rudawski, N. G. ; Stemmer, S. / Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals. Physics and Technology of High-k Materials 8. 3. ed. 2010. pp. 117-121 (ECS Transactions; 3).
@inproceedings{1440598a277d4b09b1148c5c6f6d4e79,
title = "Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals",
abstract = "The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.",
author = "Y. Hwang and Roman Engel-Herbert and Rudawski, {N. G.} and S. Stemmer",
year = "2010",
month = "12",
day = "1",
doi = "10.1149/1.3481598",
language = "English (US)",
isbn = "9781566778220",
series = "ECS Transactions",
number = "3",
pages = "117--121",
booktitle = "Physics and Technology of High-k Materials 8",
edition = "3",

}

Hwang, Y, Engel-Herbert, R, Rudawski, NG & Stemmer, S 2010, Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals. in Physics and Technology of High-k Materials 8. 3 edn, ECS Transactions, no. 3, vol. 33, pp. 117-121, 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting, Las Vegas, NV, United States, 10/11/10. https://doi.org/10.1149/1.3481598

Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals. / Hwang, Y.; Engel-Herbert, Roman; Rudawski, N. G.; Stemmer, S.

Physics and Technology of High-k Materials 8. 3. ed. 2010. p. 117-121 (ECS Transactions; Vol. 33, No. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals

AU - Hwang, Y.

AU - Engel-Herbert, Roman

AU - Rudawski, N. G.

AU - Stemmer, S.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

AB - The electrical properties of Pt/HfO2/In0.53Ga 0.47As metal oxide semiconductor capacitors were studied as a function of post-deposition annealing conditions and analyzed using the conductance and Terman methods. Forming gas annealed gate stack exhibit an unpinned Fermi level while nitrogen annealed stacks are effectively pinned at midgap.

UR - http://www.scopus.com/inward/record.url?scp=79952660550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952660550&partnerID=8YFLogxK

U2 - 10.1149/1.3481598

DO - 10.1149/1.3481598

M3 - Conference contribution

AN - SCOPUS:79952660550

SN - 9781566778220

T3 - ECS Transactions

SP - 117

EP - 121

BT - Physics and Technology of High-k Materials 8

ER -

Hwang Y, Engel-Herbert R, Rudawski NG, Stemmer S. Fermi-level unpinning of HfO2/In0.53Ga 0.47As gate stacks using hydrogen anneals. In Physics and Technology of High-k Materials 8. 3 ed. 2010. p. 117-121. (ECS Transactions; 3). https://doi.org/10.1149/1.3481598