Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films

P. K. Baumann, G. R. Bai, S. K. Streiffer, O. Auciello, K. Ghosh, S. Stemmer, A. Munkholm, Carol Thompson, D. J. Kim, J. P. Maria, A. I. Kingon

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3 Scopus citations

Abstract

We have grown epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and (1-x)(Pb(Mg1/3Nb2/3)O3)-x(PbTiO3) (PMN-PT) thin films by metalorganic chemical vapor deposition at 700 - 780°C on (100) SrTiO3 and SrRuO3/SrTiO3 substrates. The zero-bias permittivity and loss measured at room temperature and 10 kHz for 220 nm thick pure PMN films were 900 and 1.5%, respectively. For PMN-PT films, the small-signal permittivity ranged from 1000 to 1500 depending on deposition conditions and Ti content; correspondingly low values for the zero-bias dielectric loss between 1 and 5% were determined for all specimens. For PMN-PT with x of approximately 0.30-0.35, polarization hysteresis with Pr≈18μC/cm2 was obtained. Initial piezoresponse data are discussed.

Original languageEnglish (US)
Pages (from-to)517-522
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume596
Publication statusPublished - Dec 11 2000
EventFerroelectric Thin Films VIII - Boston, MA, USA
Duration: Nov 29 1999Dec 2 1999

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Baumann, P. K., Bai, G. R., Streiffer, S. K., Auciello, O., Ghosh, K., Stemmer, S., ... Kingon, A. I. (2000). Ferroelectric and piezoelectric properties of MOCVD Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films. Materials Research Society Symposium - Proceedings, 596, 517-522.