Ferroelectric control of the conduction at the LaAlO 3 /SrTiO 3 heterointerface

Vu Thanh Tra, Jhih Wei Chen, Po Cheng Huang, Bo Chao Huang, Ye Cao, Chao Hui Yeh, Heng Jui Liu, Eugene A. Eliseev, Anna N. Morozovska, Jiunn Yuan Lin, Yi Chun Chen, Ming Wen Chu, Po Wen Chiu, Ya Ping Chiu, Long-qing Chen, Chung Lin Wu, Ying Hao Chu

Research output: Contribution to journalArticle

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Abstract

Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as-grown polarization (P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction (P down ) results in charge accumulation and enhances the conduction at the interface. The metal-insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.

Original languageEnglish (US)
Pages (from-to)3357-3364
Number of pages8
JournalAdvanced Materials
Volume25
Issue number24
DOIs
StatePublished - Jun 25 2013

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Tra, V. T., Chen, J. W., Huang, P. C., Huang, B. C., Cao, Y., Yeh, C. H., Liu, H. J., Eliseev, E. A., Morozovska, A. N., Lin, J. Y., Chen, Y. C., Chu, M. W., Chiu, P. W., Chiu, Y. P., Chen, L., Wu, C. L., & Chu, Y. H. (2013). Ferroelectric control of the conduction at the LaAlO 3 /SrTiO 3 heterointerface Advanced Materials, 25(24), 3357-3364. https://doi.org/10.1002/adma.201300757