Ferroelectric domain structures in SrBi 2Nb 2O 9 epitaxial thin films

Electron microscopy and phase-field simulations

Y. L. Li, Long-qing Chen, G. Asayama, D. G. Schlom, M. A. Zurbuchen, S. K. Streiffer

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) along with computer simulations coupled with phase-field methods were used for the investigation of ferroelectric domain structures of SrBi 2Nb 2O 9 epitaxial thin films. The investigational observations show that the ferroelectric domain morphology of thin films was irregular, with highly curved domain walls. It was observed that the isotropic domain wall energy largely effected the domain morphology. It was shown that as the ferroelastic distortion increased, the domain walls became increasingly faceted. The results show that the faceted nature of prototypical oxides is the result of ferroelastic distortions.

Original languageEnglish (US)
Pages (from-to)6332-6340
Number of pages9
JournalJournal of Applied Physics
Volume95
Issue number11 I
DOIs
StatePublished - Jun 1 2004

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domain wall
electron microscopy
thin films
simulation
computerized simulation
transmission electron microscopy
oxides
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Li, Y. L. ; Chen, Long-qing ; Asayama, G. ; Schlom, D. G. ; Zurbuchen, M. A. ; Streiffer, S. K. / Ferroelectric domain structures in SrBi 2Nb 2O 9 epitaxial thin films : Electron microscopy and phase-field simulations. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 11 I. pp. 6332-6340.
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Ferroelectric domain structures in SrBi 2Nb 2O 9 epitaxial thin films : Electron microscopy and phase-field simulations. / Li, Y. L.; Chen, Long-qing; Asayama, G.; Schlom, D. G.; Zurbuchen, M. A.; Streiffer, S. K.

In: Journal of Applied Physics, Vol. 95, No. 11 I, 01.06.2004, p. 6332-6340.

Research output: Contribution to journalArticle

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