TY - JOUR
T1 - Ferroelectric Domain Wall Memristor
AU - McConville, James P.V.
AU - Lu, Haidong
AU - Wang, Bo
AU - Tan, Yueze
AU - Cochard, Charlotte
AU - Conroy, Michele
AU - Moore, Kalani
AU - Harvey, Alan
AU - Bangert, Ursel
AU - Chen, Long Qing
AU - Gruverman, Alexei
AU - Gregg, J. Marty
N1 - Funding Information:
This work is supported by the EPSRC (grant no. EP/P02453X/1), the US?Ireland R&D Partnership Programme (grant no. USI 120) and an EU H2020 ITN ?Materials for Neuromorphic Circuits (MANIC)?. The research at the University of Nebraska?Lincoln was supported by the National Science Foundation under Grant DMR-1709237. J.P.V.M. is supported by an EPSRC doctoral grant (ref 1631303). The authors thank R. G. P. McQuaid and A. Kumar for helpful discussions and M. P. Campbell and P. W. Turner for assistance in the early stages of conception.
Funding Information:
This work is supported by the EPSRC (grant no. EP/P02453X/1), the US–Ireland R&D Partnership Programme (grant no. USI 120) and an EU H2020 ITN “Materials for Neuromorphic Circuits (MANIC)”. The research at the University of Nebraska–Lincoln was supported by the National Science Foundation under Grant DMR‐1709237. J.P.V.M. is supported by an EPSRC doctoral grant (ref 1631303). The authors thank R. G. P. McQuaid and A. Kumar for helpful discussions and M. P. Campbell and P. W. Turner for assistance in the early stages of conception.
Publisher Copyright:
© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/7/1
Y1 - 2020/7/1
N2 - A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
AB - A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this “domain wall memristor” demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.
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U2 - 10.1002/adfm.202000109
DO - 10.1002/adfm.202000109
M3 - Article
C2 - 32684905
AN - SCOPUS:85084430906
VL - 30
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 28
M1 - 2000109
ER -