Ferroelectric properties of Ag doped PbZr 0.53 Ti 0.47 O 3 thin film deposited by sol–gel process

Jinxin Wang, Guicheng Jiang, Weicheng Huang, Yunfei Chang, Danqing Liu, Bin Yang, Wenwu Cao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To suppress the generation of oxygen vacancy during the PbZr 0.53 Ti 0.47 O 3 (PZT) film synthesis process, herein, the 0–3 type Ag/PZT film is chosen as a prototype to systematically investigate the mechanisms of oxygen vacancy decrease and the relationship of ferroelectric properties. The uniform and dense films were successfully fabricated on fluorine tin oxide glasses (FTO) by facile sol–gel processes. It is confirmed the existence of silver nanoparticles in the film, indicating the composite ferroelectric films are of 0–3 type. When Ag doping mole concentration is 0.010 in the sol, a large remnant polarization (P r ) of ~ 50.7 µΧ/cm 2 is got, which is 37.9 µΧ/cm 2 for pure PZT. UV–vis spectrum confirms the generation of Ag 2 O in the process of mixing the sol. Furthermore, the oxygen vacancies caused by natural evaporation of lead specie are effectively reduced because of the decomposition of Ag 2 O, confirmed by X-ray photoelectron spectroscopy. This work points out the generated Ag 2 O as the intermediate product is the key to achieve high remnant polarization in Ag/PZT based film and make it as a promising candidate for memory applications.

Original languageEnglish (US)
Pages (from-to)2592-2599
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume30
Issue number3
DOIs
StatePublished - Feb 15 2019

Fingerprint

Ferroelectric materials
Oxygen vacancies
Thin films
thin films
Polymethyl Methacrylate
Sols
Polarization
Ferroelectric films
oxygen
Fluorine
Composite films
Tin oxides
Silver
polarization
Evaporation
X ray photoelectron spectroscopy
Lead
tin oxides
Doping (additives)
fluorine

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Wang, Jinxin ; Jiang, Guicheng ; Huang, Weicheng ; Chang, Yunfei ; Liu, Danqing ; Yang, Bin ; Cao, Wenwu. / Ferroelectric properties of Ag doped PbZr 0.53 Ti 0.47 O 3 thin film deposited by sol–gel process In: Journal of Materials Science: Materials in Electronics. 2019 ; Vol. 30, No. 3. pp. 2592-2599.
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abstract = "To suppress the generation of oxygen vacancy during the PbZr 0.53 Ti 0.47 O 3 (PZT) film synthesis process, herein, the 0–3 type Ag/PZT film is chosen as a prototype to systematically investigate the mechanisms of oxygen vacancy decrease and the relationship of ferroelectric properties. The uniform and dense films were successfully fabricated on fluorine tin oxide glasses (FTO) by facile sol–gel processes. It is confirmed the existence of silver nanoparticles in the film, indicating the composite ferroelectric films are of 0–3 type. When Ag doping mole concentration is 0.010 in the sol, a large remnant polarization (P r ) of ~ 50.7 µΧ/cm 2 is got, which is 37.9 µΧ/cm 2 for pure PZT. UV–vis spectrum confirms the generation of Ag 2 O in the process of mixing the sol. Furthermore, the oxygen vacancies caused by natural evaporation of lead specie are effectively reduced because of the decomposition of Ag 2 O, confirmed by X-ray photoelectron spectroscopy. This work points out the generated Ag 2 O as the intermediate product is the key to achieve high remnant polarization in Ag/PZT based film and make it as a promising candidate for memory applications.",
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Ferroelectric properties of Ag doped PbZr 0.53 Ti 0.47 O 3 thin film deposited by sol–gel process . / Wang, Jinxin; Jiang, Guicheng; Huang, Weicheng; Chang, Yunfei; Liu, Danqing; Yang, Bin; Cao, Wenwu.

In: Journal of Materials Science: Materials in Electronics, Vol. 30, No. 3, 15.02.2019, p. 2592-2599.

Research output: Contribution to journalArticle

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AU - Yang, Bin

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