Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition

Seung Hyun Kim, D. J. Kim, S. K. Streiffer, Jon-Paul Maria, Angus I. Kingon

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.

Original languageEnglish (US)
Pages (from-to)223-228
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume541
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

Fingerprint

Alkanolamines
Ferroelectric materials
Thin films
thin films
low voltage
hydrolysis
crystallinity
Ferroelectric thin films
Remanence
condensation
electrical properties
routes
retarding
Chelating Agents
Chelation
saturation
microstructure
cycles
annealing
Condensation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.",
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Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition. / Kim, Seung Hyun; Kim, D. J.; Streiffer, S. K.; Maria, Jon-Paul; Kingon, Angus I.

In: Materials Research Society Symposium - Proceedings, Vol. 541, 01.01.1999, p. 223-228.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Ferroelectric properties of SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films using a novel chemical solution deposition

AU - Kim, Seung Hyun

AU - Kim, D. J.

AU - Streiffer, S. K.

AU - Maria, Jon-Paul

AU - Kingon, Angus I.

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Y1 - 1999/1/1

N2 - A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.

AB - A new chemical route using an alkanolamine chelating agent for synthesis of ferroelectric Sr0.8Bi2.3Ta2O9 (SBT) thin films is investigated. The addition of alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. This solution could be stored for 30 days without any appreciable change of the properties. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. This alkanolamine modified films annealed at 800°C exhibited low voltage saturation, high remanent polarization and resistance to fatigue after 1010 switching cycles. These electrical properties are favorable for non-volatile memory applications.

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