Ferroelectric transistor model based on self-consistent solution of 2D Poisson's, non-equilibrium Green's function and multi-domain Landau Khalatnikov equations

A. K. Saha, P. Sharma, Ismaila Dabo, S. Datta, Sumeet Kumar Gupta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

We present a physics-based model for ferroelectric/negative capacitance transistors (FEFETs/NCFETs) without an inter-layer metal between ferroelectric and dielectric in the 'ate stack. The model self-consistentl' solves 2D Poissons equation, non-equilibrium Greens function (NEGF) based charge and transport equations, and multi-domain Landau Khalatnikov (LK) equations with the domain interaction term. The proposed simulation framework captures the variation of ferroelectric (FE) polarization (P) along the gate length due to non-uniform electric field (E) along the channel. To calibrate the LK equations, we fabricate and characterize 10nm HZO films. Based on the calibrated model, we analyze the gate/drain voltage dependence of P distribution in the FE and its effect on the channel potential and current-voltage characteristics. Our results highlight the importance of larger domain interaction to boost the benefits of FEFETs with subthreshold swing (SS) as small as ∼50mV/decade achieved at room temperature. As domain interaction increases, the characteristics of FEFETs without inter-layer metal (SS, negative drain induced barrier lowering (DIBL), negative output conductance) approach those of FEFETs with inter-layer metal.

Original languageEnglish (US)
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages13.5.1-13.5.4
ISBN (Electronic)9781538635599
DOIs
StatePublished - Jan 23 2018
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: Dec 2 2017Dec 6 2017

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
CountryUnited States
CitySan Francisco
Period12/2/1712/6/17

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Saha, A. K., Sharma, P., Dabo, I., Datta, S., & Gupta, S. K. (2018). Ferroelectric transistor model based on self-consistent solution of 2D Poisson's, non-equilibrium Green's function and multi-domain Landau Khalatnikov equations. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 13.5.1-13.5.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268385