Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy

D. A. Tenne, P. Turner, J. D. Schmidt, M. Biegalski, Y. L. Li, L. Q. Chen, A. Soukiassian, S. Trolier-Mckinstry, D. G. Schlom, X. X. Xi, D. D. Fong, P. H. Fuoss, J. A. Eastman, G. B. Stephenson, C. Thompson, S. K. Streiffer

Research output: Contribution to journalArticlepeer-review

94 Scopus citations

Abstract

We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

Original languageEnglish (US)
Article number177601
JournalPhysical review letters
Volume103
Issue number17
DOIs
StatePublished - Oct 21 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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