Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy

D. A. Tenne, P. Turner, J. D. Schmidt, M. Biegalski, Y. L. Li, L. Q. Chen, A. Soukiassian, S. Trolier-Mckinstry, D. G. Schlom, X. X. Xi, D. D. Fong, P. H. Fuoss, J. A. Eastman, G. B. Stephenson, C. Thompson, S. K. Streiffer

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Abstract

We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to Tc tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below Tc, and thermodynamic phase-field model calculations of Tc as a function of thickness.

Original languageEnglish (US)
Article number177601
JournalPhysical Review Letters
Volume103
Issue number17
DOIs
StatePublished - Oct 21 2009

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tenne, D. A., Turner, P., Schmidt, J. D., Biegalski, M., Li, Y. L., Chen, L. Q., Soukiassian, A., Trolier-Mckinstry, S., Schlom, D. G., Xi, X. X., Fong, D. D., Fuoss, P. H., Eastman, J. A., Stephenson, G. B., Thompson, C., & Streiffer, S. K. (2009). Ferroelectricity in ultrathin BaTiO3 films: Probing the size effect by ultraviolet raman spectroscopy. Physical Review Letters, 103(17), [177601]. https://doi.org/10.1103/PhysRevLett.103.177601