Ferroelectrics: The strain limits on switching

Research output: Contribution to journalShort survey

40 Citations (Scopus)

Abstract

The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.

Original languageEnglish (US)
Pages (from-to)727-728
Number of pages2
JournalNature Materials
Volume4
Issue number10
DOIs
StatePublished - Jan 1 2005

Fingerprint

Ferroelectric materials
Ferroelectric thin films
constrictions
ceramics
ferroelectric materials
thin films
Crystal symmetry
symmetry
polarization
Polarization
crystals
Data storage equipment
interactions

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.",
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Ferroelectrics : The strain limits on switching. / Cao, Wenwu.

In: Nature Materials, Vol. 4, No. 10, 01.01.2005, p. 727-728.

Research output: Contribution to journalShort survey

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