Ferroelectrics: The strain limits on switching

Research output: Contribution to journalShort surveypeer-review

45 Scopus citations

Abstract

The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.

Original languageEnglish (US)
Pages (from-to)727-728
Number of pages2
JournalNature Materials
Volume4
Issue number10
DOIs
StatePublished - Oct 2005

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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