The crystal symmetry and related strains of ferroelectric materials strongly influence their switching behavior. Strain limitation on attainable polarization on ceramic ferroelectric thin films has been a technical hurdle for their application in memory devices. The first type of strain limitation on switching is provided by the transformation strain. The second type of strain restriction on switching occurs in ceramics, and is caused by intergranular interactions. The third type of strain restriction on switching occurs in ferroelectric thin films.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering