Ferromagnetism in Bi2Se3:Mn epitaxial layers

H. J. Von Bardeleben, J. L. Cantin, D. M. Zhang, Anthony Raymond Richardella, D. W. Rench, Nitin Samarth, J. A. Borchers

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The magnetism in ∼1 at% Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.

Original languageEnglish (US)
Article number075149
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number7
DOIs
StatePublished - Aug 30 2013

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Ferromagnetic resonance
Ferromagnetism
Epitaxial layers
ferromagnetic resonance
frequency modulation
ferromagnetism
Neutrons
Anisotropy
reflectance
neutrons
anisotropy
Magnetism
conduction electrons
Temperature
magnetic measurement
Magnetization
critical temperature
magnetization
temperature
Electrons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Von Bardeleben, H. J. ; Cantin, J. L. ; Zhang, D. M. ; Richardella, Anthony Raymond ; Rench, D. W. ; Samarth, Nitin ; Borchers, J. A. / Ferromagnetism in Bi2Se3:Mn epitaxial layers. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 88, No. 7.
@article{e047b1a313284de9bcd99112fafc541a,
title = "Ferromagnetism in Bi2Se3:Mn epitaxial layers",
abstract = "The magnetism in ∼1 at{\%} Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.",
author = "{Von Bardeleben}, {H. J.} and Cantin, {J. L.} and Zhang, {D. M.} and Richardella, {Anthony Raymond} and Rench, {D. W.} and Nitin Samarth and Borchers, {J. A.}",
year = "2013",
month = "8",
day = "30",
doi = "10.1103/PhysRevB.88.075149",
language = "English (US)",
volume = "88",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "7",

}

Ferromagnetism in Bi2Se3:Mn epitaxial layers. / Von Bardeleben, H. J.; Cantin, J. L.; Zhang, D. M.; Richardella, Anthony Raymond; Rench, D. W.; Samarth, Nitin; Borchers, J. A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 7, 075149, 30.08.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ferromagnetism in Bi2Se3:Mn epitaxial layers

AU - Von Bardeleben, H. J.

AU - Cantin, J. L.

AU - Zhang, D. M.

AU - Richardella, Anthony Raymond

AU - Rench, D. W.

AU - Samarth, Nitin

AU - Borchers, J. A.

PY - 2013/8/30

Y1 - 2013/8/30

N2 - The magnetism in ∼1 at% Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.

AB - The magnetism in ∼1 at% Mn-doped nanometric Bi2Se 3 epitaxial layers has been studied by ferromagnetic resonance (FMR), magnetometry, and polarized neutron reflectivity (PNR) measurements. The FMR results reveal the formation of an intrinsic homogeneous FM bulk phase, as confirmed by the PNR measurements. Its critical temperature is low: T c ≈ 6 K; no surface magnetic phase is detected above this temperature. The FMR measurements at T = 4.2 K show a single uniform mode spectrum with a strong uniaxial in-plane/out-of-plane symmetry. The uniaxial anisotropy field at T = 4 K is Ha ∼ -2500 Oe, corresponding to a uniaxial anisotropy constant of -9 × 103 erg/cm3. The easy axis of magnetization is oriented in the film plane for temperatures between 4 K and Tc. Conduction electron-mediated FM in this (very) diluted magnetic semiconductor is considered as the most probable origin of the FM phase formation.

UR - http://www.scopus.com/inward/record.url?scp=84884528283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884528283&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.88.075149

DO - 10.1103/PhysRevB.88.075149

M3 - Article

AN - SCOPUS:84884528283

VL - 88

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

M1 - 075149

ER -