FETRAM. An organic ferroelectric material based novel random access memory cell

Saptarshi Das, Joerg Appenzeller

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

Original languageEnglish (US)
Pages (from-to)4003-4007
Number of pages5
JournalNano Letters
Volume11
Issue number9
DOIs
StatePublished - Sep 14 2011

Fingerprint

ferroelectric materials
random access memory
Ferroelectric materials
transistors
Data storage equipment
readout
cells
Transistors
capacitors
nanowires
shift
polymers
silicon
Networks (circuits)
electronics
Silicon
Nanowires
Polymers
Capacitors
Electronic equipment

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Das, Saptarshi ; Appenzeller, Joerg. / FETRAM. An organic ferroelectric material based novel random access memory cell. In: Nano Letters. 2011 ; Vol. 11, No. 9. pp. 4003-4007.
@article{a7092425addb4d50afbd96c98f58b1c4,
title = "FETRAM. An organic ferroelectric material based novel random access memory cell",
abstract = "Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.",
author = "Saptarshi Das and Joerg Appenzeller",
year = "2011",
month = "9",
day = "14",
doi = "10.1021/nl2023993",
language = "English (US)",
volume = "11",
pages = "4003--4007",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "9",

}

FETRAM. An organic ferroelectric material based novel random access memory cell. / Das, Saptarshi; Appenzeller, Joerg.

In: Nano Letters, Vol. 11, No. 9, 14.09.2011, p. 4003-4007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - FETRAM. An organic ferroelectric material based novel random access memory cell

AU - Das, Saptarshi

AU - Appenzeller, Joerg

PY - 2011/9/14

Y1 - 2011/9/14

N2 - Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

AB - Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.

UR - http://www.scopus.com/inward/record.url?scp=80052801602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052801602&partnerID=8YFLogxK

U2 - 10.1021/nl2023993

DO - 10.1021/nl2023993

M3 - Article

VL - 11

SP - 4003

EP - 4007

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 9

ER -