FETs with superconducting channels

A. W. Kleinsasser, T. N. Jackson

Research output: Contribution to conferencePaper

Abstract

The authors consider the implications of inducing superconducting properties in the channel of an FET by using superconductors as the source and drain metallizations. Under some circumstances the semiconductor source and drain regions can themselves become superconducting due to the proximity effect, i.e., the penetration of Cooper pairs into normal material at the interface with a superconductor. The proximity-effect regions can overlap if the channel is short enough, making the device a Josephson weak link in which a gate controls both superconductive and normal currents. The authors review the basic device concept and electrical characteristics, discuss several important materials-related issue, examine the present experimental and theoretical situation, and discuss the potential for applications. They describe recent work on superconducting In0.47Ga0.53As JFETs (junction FETs) that addresses several of the issues raised by the present discussion.

Original languageEnglish (US)
Pages11-20
Number of pages10
StatePublished - Dec 1 1989
EventProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA
Duration: Aug 7 1989Aug 9 1989

Other

OtherProceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
CityIthaca, NY, USA
Period8/7/898/9/89

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kleinsasser, A. W., & Jackson, T. N. (1989). FETs with superconducting channels. 11-20. Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA, .