Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

Cui Zu Chang, Min Hao Liu, Zuo Cheng Zhang, Ya Yu Wang, Ke He, Qi Kun Xue

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2–xCrxTe3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2–xCrxTe3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

Original languageEnglish (US)
Article number637501
Pages (from-to)1-5
Number of pages5
JournalScience China: Physics, Mechanics and Astronomy
Volume59
Issue number3
DOIs
StatePublished - Mar 1 2016

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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