Field-effect transistor structures with quasi-one-dimensional channel

Slava V. Rotkin, Harry E. Ruda, Alexander Shik

Research output: Contribution to journalArticlepeer-review

Abstract

Drift-diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

Original languageEnglish (US)
Pages (from-to)161-170
Number of pages10
JournalInternational Journal of Nanoscience
Volume3
Issue number1-2
DOIs
StatePublished - Feb 1 2004

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Bioengineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering

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