Field-effect transistor structures with quasi-one-dimensional channel

Vyacheslav Rotkin, Harry E. Ruda, Alexander Shik

Research output: Contribution to journalArticle

Abstract

Drift-diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

Original languageEnglish (US)
Pages (from-to)161-170
Number of pages10
JournalInternational Journal of Nanoscience
Volume3
Issue number1-2
DOIs
StatePublished - Feb 1 2004

Fingerprint

Field effect transistors
field effect transistors
Nanowires
Nanotubes
Equipment and Supplies
Semiconductors
Charge density
Static Electricity
density distribution
Electrostatics
nanotubes
Screening
Transistors
nanowires
transistors
screening
wire
Wire
electrostatics
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Bioengineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Rotkin, Vyacheslav ; Ruda, Harry E. ; Shik, Alexander. / Field-effect transistor structures with quasi-one-dimensional channel. In: International Journal of Nanoscience. 2004 ; Vol. 3, No. 1-2. pp. 161-170.
@article{59925afd26f34c8eb24b7dfdb588710c,
title = "Field-effect transistor structures with quasi-one-dimensional channel",
abstract = "Drift-diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.",
author = "Vyacheslav Rotkin and Ruda, {Harry E.} and Alexander Shik",
year = "2004",
month = "2",
day = "1",
doi = "10.1142/S0219581X04001948",
language = "English (US)",
volume = "3",
pages = "161--170",
journal = "International Journal of Nanoscience",
issn = "0219-581X",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "1-2",

}

Field-effect transistor structures with quasi-one-dimensional channel. / Rotkin, Vyacheslav; Ruda, Harry E.; Shik, Alexander.

In: International Journal of Nanoscience, Vol. 3, No. 1-2, 01.02.2004, p. 161-170.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Field-effect transistor structures with quasi-one-dimensional channel

AU - Rotkin, Vyacheslav

AU - Ruda, Harry E.

AU - Shik, Alexander

PY - 2004/2/1

Y1 - 2004/2/1

N2 - Drift-diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

AB - Drift-diffusion model is applied for transport in a one-dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a single wall nanotube basing on a self-consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of weaker screening and specific charge density distribution in quasi-one-dimensional channel. The device characteristics are shown to be sensitive to the geometry of leads and are analyzed separately for bulk, planar and wire contacts.

UR - http://www.scopus.com/inward/record.url?scp=13844255172&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13844255172&partnerID=8YFLogxK

U2 - 10.1142/S0219581X04001948

DO - 10.1142/S0219581X04001948

M3 - Article

AN - SCOPUS:13844255172

VL - 3

SP - 161

EP - 170

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

SN - 0219-581X

IS - 1-2

ER -