Field emission enhanced semiconductor thermoelectric cooler

Brock L. Weiss, Paul H. Cutler, Nicholas M. Miskovsky, Moon Chung, Nalin Kumar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication and measurements of a prototype field emission enhanced thermoelectric cooler device was investigated. The system involved cooling via electron field emission from wide band gap materials based on a corrected statistical mechanical theory of energy exchange in the Nottingham effect with calculated cooling rates of up to 100 W/cm2. The cooler used an electric field modulated current to transport energy from a cold source to a hot source through n- and p-type carriers. The cooling device is expected to have an energy transport per electron up to 500 me V at room temperature.

Original languageEnglish (US)
Title of host publicationTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
EditorsA.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong
Pages186-187
Number of pages2
StatePublished - Dec 1 2004
EventTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, United States
Duration: Jul 11 2004Jul 16 2004

Publication series

NameTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

Other

OtherTechnical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
CountryUnited States
CityCambridge, MA
Period7/11/047/16/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Weiss, B. L., Cutler, P. H., Miskovsky, N. M., Chung, M., & Kumar, N. (2004). Field emission enhanced semiconductor thermoelectric cooler. In A. I. Akinwande, L-Y. Chen, I. Kymissis, & C-Y. Hong (Eds.), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 (pp. 186-187). (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).