Abstract
The fabrication and measurements of a prototype field emission enhanced thermoelectric cooler device was investigated. The system involved cooling via electron field emission from wide band gap materials based on a corrected statistical mechanical theory of energy exchange in the Nottingham effect with calculated cooling rates of up to 100 W/cm2. The cooler used an electric field modulated current to transport energy from a cold source to a hot source through n- and p-type carriers. The cooling device is expected to have an energy transport per electron up to 500 me V at room temperature.
| Original language | English (US) |
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| Title of host publication | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 |
| Editors | A.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong |
| Pages | 186-187 |
| Number of pages | 2 |
| State | Published - Dec 1 2004 |
| Event | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, United States Duration: Jul 11 2004 → Jul 16 2004 |
Publication series
| Name | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 |
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Other
| Other | Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 |
|---|---|
| Country | United States |
| City | Cambridge, MA |
| Period | 7/11/04 → 7/16/04 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
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Cite this
Weiss, B. L., Cutler, P. H., Miskovsky, N. M., Chung, M., & Kumar, N. (2004). Field emission enhanced semiconductor thermoelectric cooler. In A. I. Akinwande, L-Y. Chen, I. Kymissis, & C-Y. Hong (Eds.), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 (pp. 186-187). (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).