First Demonstration of WSe 2 Based CMOS-SRAM

Chin Sheng Pang, Niharika Thakuria, Sumeet Kumar Gupta, Zhihong Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe 2 as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low V DD of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe 2 for flexible electronics and Internet of Things (IoT).

Original languageEnglish (US)
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.2.1-22.2.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - Jan 16 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: Dec 1 2018Dec 5 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period12/1/1812/5/18

Fingerprint

random access memory
CMOS
Demonstrations
field effect transistors
Data storage equipment
direct current
Doping (additives)
oxygen plasma
Flexible electronics
Field effect transistors
transition metals
Transition metals
air
Oxygen
cells
Plasmas
electronics
Air

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Pang, C. S., Thakuria, N., Gupta, S. K., & Chen, Z. (2019). First Demonstration of WSe 2 Based CMOS-SRAM In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 22.2.1-22.2.4). [8614572] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614572
Pang, Chin Sheng ; Thakuria, Niharika ; Gupta, Sumeet Kumar ; Chen, Zhihong. / First Demonstration of WSe 2 Based CMOS-SRAM 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 22.2.1-22.2.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "In this work, we demonstrate a CMOS static random-access-memory (SRAM) using WSe 2 as a channel material for the first time, providing comprehensive DC analyses for transition metal dichalcogenide (TMD) material-based memory applications. A tri-gate design is adopted for the n-type MOSFET, while an air-stable, oxygen plasma induced doping scheme is introduced to implement the p-type MOSFET. DC measurements of SRAM cells demonstrate a unique dynamic tunability enabled by modulating the n-FET doping level through electrostatically gating the extended source/drain regions. Furthermore, with various read/write assist techniques, SRAM operation at low V DD of 0.8V is achieved. Our low power demonstration and its 2D ultra-thin material nature suggest promising applications of WSe 2 for flexible electronics and Internet of Things (IoT).",
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Pang, CS, Thakuria, N, Gupta, SK & Chen, Z 2019, First Demonstration of WSe 2 Based CMOS-SRAM in 2018 IEEE International Electron Devices Meeting, IEDM 2018., 8614572, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2018-December, Institute of Electrical and Electronics Engineers Inc., pp. 22.2.1-22.2.4, 64th Annual IEEE International Electron Devices Meeting, IEDM 2018, San Francisco, United States, 12/1/18. https://doi.org/10.1109/IEDM.2018.8614572

First Demonstration of WSe 2 Based CMOS-SRAM . / Pang, Chin Sheng; Thakuria, Niharika; Gupta, Sumeet Kumar; Chen, Zhihong.

2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 22.2.1-22.2.4 8614572 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Pang CS, Thakuria N, Gupta SK, Chen Z. First Demonstration of WSe 2 Based CMOS-SRAM In 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc. 2019. p. 22.2.1-22.2.4. 8614572. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2018.8614572