First observation of paramagnetic nitrogen dangling-bond centers in silicon nitride

William L. Warren, Patrick M. Lenahan, Sean E. Curry

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Abstract

We report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of N14 hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electrones wave function is almost entirely p in character. This is only the second fundamental intrinsic electron-paramagnetic-resonance center to be identified in silicon nitride.

Original languageEnglish (US)
Pages (from-to)207-210
Number of pages4
JournalPhysical Review Letters
Volume65
Issue number2
DOIs
StatePublished - Jan 1 1990

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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