First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

Patrick M. Lenahan, Sean E. Curry

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.

Original languageEnglish (US)
Pages (from-to)157-159
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number2
DOIs
StatePublished - Dec 1 1990

Fingerprint

silicon nitrides
silicon
trapping
wave functions
defects
electronics
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{5115d57f04ab4627af36b1d0b0b1dd97,
title = "First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride",
abstract = "We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon {"}dangling bond{"} defect. Our results also demonstrate that the unpaired electron is highly localized (about 75{\%}) on the central silicon and that the wave function is primarily p type.",
author = "Lenahan, {Patrick M.} and Curry, {Sean E.}",
year = "1990",
month = "12",
day = "1",
doi = "10.1063/1.103278",
language = "English (US)",
volume = "56",
pages = "157--159",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride. / Lenahan, Patrick M.; Curry, Sean E.

In: Applied Physics Letters, Vol. 56, No. 2, 01.12.1990, p. 157-159.

Research output: Contribution to journalArticle

TY - JOUR

T1 - First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

AU - Lenahan, Patrick M.

AU - Curry, Sean E.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.

AB - We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon "dangling bond" defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.

UR - http://www.scopus.com/inward/record.url?scp=51149202942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51149202942&partnerID=8YFLogxK

U2 - 10.1063/1.103278

DO - 10.1063/1.103278

M3 - Article

VL - 56

SP - 157

EP - 159

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -