Flexible plastic substrate ZnO thin film transistor circuits

Dalong A. Zhao, Devin A. Mourey, Thomas N. Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400 °C on GaAs substrates have demonstrated mobility over 100 cm2/V·s [1], and five-stage ring oscillators based on 0.5 μm gate length indiumgallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators [2].

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages177-178
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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    Zhao, D. A., Mourey, D. A., & Jackson, T. N. (2009). Flexible plastic substrate ZnO thin film transistor circuits. In 67th Device Research Conference, DRC 2009 (pp. 177-178). [5354938] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2009.5354938