Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors

Lisong Zhou, Soyoun Jung, Erik Brandon, Thomas Nelson Jackson

Research output: Contribution to journalArticle

56 Scopus citations

Abstract

We present two different kinds of semiconductor strain sensors: ungated n+ micro-crystalline silicon (n+ μC-Si), and gated hydrogenated amorphous silicon (a-Si:H). Both sensor types are fabricated on flexible polyimide substrates. The sensors were characterized with bending perpendicular, parallel, and at 45° with respect to the sensor bias direction, and for several bending diameters. Sensor size and power consumption are significantly reduced compared to metallic foil strain sensors. Small sensor size and ease of integration with a-Si:H thin-film transistors also allows arrays of strain sensors or combinations of strain sensors with varying geometric orientation to allow strain direction as well as magnitude to be unambiguously determined.

Original languageEnglish (US)
Pages (from-to)380-385
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume53
Issue number2
DOIs
StatePublished - Feb 1 2006

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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