Flicker-noise improvement in 100-nm LgSi0.50Ge 0.50 strained quantum-well transistors using ultrathin si cap Layer

Feng Li, Se Hoon Lee, Zhao Fang, Prashant Majhi, Qiming Zhang, Sanjay K. Banerjee, Suman Datta

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    This letter presents a record low flicker-noise spectral density in biaxial compressively strained p-channel 100-nm LgSi0.50Ge 0.50 quantum-well FETs (QWFETs) with ultrathin Si (∼2 nm) barrier layer and 1-nm EOT hafnium silicate gate dielectric. The normalized power spectral density of Id fluctuations SId/Id 2 in Si0.50Ge0.50 QWFETs exhibits significant improvement by ten times over surface channel unstrained Si pMOSFETs at high Vg due to strong confinement of holes within the high-mobility QW and strong quantization in the ultrathin Si barrier layer enabled by low-thermal-budget device processing. The noise behavior in strained QW devices is found to evolve from being correlated mobility fluctuation dominated across most of Vg range to being Hooge mobility fluctuation dominated at very high Vg.

    Original languageEnglish (US)
    Article number5339241
    Pages (from-to)47-49
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume31
    Issue number1
    DOIs
    StatePublished - Jan 1 2010

    Fingerprint

    Field effect transistors
    Semiconductor quantum wells
    Transistors
    Hafnium
    Silicates
    Spectral density
    Gate dielectrics
    Power spectral density
    Processing
    Hot Temperature

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Li, Feng ; Lee, Se Hoon ; Fang, Zhao ; Majhi, Prashant ; Zhang, Qiming ; Banerjee, Sanjay K. ; Datta, Suman. / Flicker-noise improvement in 100-nm LgSi0.50Ge 0.50 strained quantum-well transistors using ultrathin si cap Layer. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 1. pp. 47-49.
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    Flicker-noise improvement in 100-nm LgSi0.50Ge 0.50 strained quantum-well transistors using ultrathin si cap Layer. / Li, Feng; Lee, Se Hoon; Fang, Zhao; Majhi, Prashant; Zhang, Qiming; Banerjee, Sanjay K.; Datta, Suman.

    In: IEEE Electron Device Letters, Vol. 31, No. 1, 5339241, 01.01.2010, p. 47-49.

    Research output: Contribution to journalArticle

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    AU - Li, Feng

    AU - Lee, Se Hoon

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    AU - Majhi, Prashant

    AU - Zhang, Qiming

    AU - Banerjee, Sanjay K.

    AU - Datta, Suman

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