Fluid flow and transport processes in a large area atmospheric pressure stagnation flow CVD reactor for deposition of thin films

Gang Luo, S. P. Vanka, N. Glumac

    Research output: Contribution to journalArticle

    27 Citations (Scopus)

    Abstract

    This paper investigates a new CVD reactor geometry to deposit uniform films on large area substrates at atmospheric pressure. Calculations have been performed for a wide range of parameters to investigate the effects of inlet flow rates, substrate rotation, and height of the reactor chamber. It is seen that for some combinations of the parameters the flow above the wafer is unsteady. Effect of rounded corners on damping instabilities of the shear layers is explored. By employing the rounded corners, we have been able to reduce the RMS non-uniformity to about 1% at atmospheric pressure on a 30 cm wafer. The impinging jet geometry can be used for the deposition of thin solid films without the penalty of a vacuum system and associated equipment costs.

    Original languageEnglish (US)
    Pages (from-to)4979-4994
    Number of pages16
    JournalInternational Journal of Heat and Mass Transfer
    Volume47
    Issue number23
    DOIs
    StatePublished - Nov 1 2004

    Fingerprint

    stagnation flow
    Atmospheric pressure
    fluid flow
    Flow of fluids
    Chemical vapor deposition
    atmospheric pressure
    reactors
    vapor deposition
    wafers
    inlet flow
    Thin films
    Inlet flow
    Geometry
    vacuum systems
    shear layers
    Substrates
    thin films
    geometry
    penalties
    nonuniformity

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Mechanical Engineering
    • Fluid Flow and Transfer Processes

    Cite this

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    abstract = "This paper investigates a new CVD reactor geometry to deposit uniform films on large area substrates at atmospheric pressure. Calculations have been performed for a wide range of parameters to investigate the effects of inlet flow rates, substrate rotation, and height of the reactor chamber. It is seen that for some combinations of the parameters the flow above the wafer is unsteady. Effect of rounded corners on damping instabilities of the shear layers is explored. By employing the rounded corners, we have been able to reduce the RMS non-uniformity to about 1{\%} at atmospheric pressure on a 30 cm wafer. The impinging jet geometry can be used for the deposition of thin solid films without the penalty of a vacuum system and associated equipment costs.",
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    Fluid flow and transport processes in a large area atmospheric pressure stagnation flow CVD reactor for deposition of thin films. / Luo, Gang; Vanka, S. P.; Glumac, N.

    In: International Journal of Heat and Mass Transfer, Vol. 47, No. 23, 01.11.2004, p. 4979-4994.

    Research output: Contribution to journalArticle

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