TY - JOUR
T1 - Formaldehyde assisted reduction achieved p-type orthorhombic tin oxide film prepared by an inexpensive chemical method
AU - Sun, Jian
AU - Chen, Zequn
AU - Nie, Sha
AU - Yu, Zhigen
AU - Yan, Shenghui
AU - Gong, Hao
AU - Tang, Chunhua
AU - Bai, Xue
AU - Xu, Jianmei
AU - Zhao, Ling
AU - Zhou, Wei
AU - Wang, Qing
N1 - Funding Information:
Funding supports from the Fundamental Research Funds for the Central Universities, China University of Geosciences (Wuhan) (No. CUG140613), the National Natural Science Foundation of China (No. 61404116), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars (No. KZ15Z20053).
PY - 2017/11
Y1 - 2017/11
N2 - The fabrication of tin oxide thin film of orthorhombic phase has been succeeded under the high pressures from 1.5 GPa to 50 GPa. In this paper, we demonstrate the viability of p-type tin oxide thin film at atmosphere pressure of 0.1 MPa, by a chemical method employing formaldehyde (HCHO) during the annealing process. By using formaldehyde to form formaldehyde-argon mixed reducing ambiance in the chemical sol-gel process, limited oxidation is reached and p-type tin oxide films of orthorhombic phase under ambient pressure are eventually achieved under optimized experimental conditions. Specifically, we have developed a p-type tin oxide thin film with an optimal Hall mobility of 8.6 cm2 V-1 s-1. Besides, our results reveal that a Sn rich environment can lead to a higher hole mobility experimentally.
AB - The fabrication of tin oxide thin film of orthorhombic phase has been succeeded under the high pressures from 1.5 GPa to 50 GPa. In this paper, we demonstrate the viability of p-type tin oxide thin film at atmosphere pressure of 0.1 MPa, by a chemical method employing formaldehyde (HCHO) during the annealing process. By using formaldehyde to form formaldehyde-argon mixed reducing ambiance in the chemical sol-gel process, limited oxidation is reached and p-type tin oxide films of orthorhombic phase under ambient pressure are eventually achieved under optimized experimental conditions. Specifically, we have developed a p-type tin oxide thin film with an optimal Hall mobility of 8.6 cm2 V-1 s-1. Besides, our results reveal that a Sn rich environment can lead to a higher hole mobility experimentally.
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U2 - 10.1088/2053-1591/aa99ae
DO - 10.1088/2053-1591/aa99ae
M3 - Article
AN - SCOPUS:85042801699
VL - 4
JO - Materials Research Express
JF - Materials Research Express
SN - 2053-1591
IS - 11
M1 - 116411
ER -