Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM

Ming Liu, Qi Liu, Shibing Long, Weihua Guan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

Original languageEnglish (US)
Title of host publicationISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems
Subtitle of host publicationNano-Bio Circuit Fabrics and Systems
Pages1-4
Number of pages4
DOIs
StatePublished - Aug 31 2010
Event2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010 - Paris, France
Duration: May 30 2010Jun 2 2010

Publication series

NameISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems

Other

Other2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010
CountryFrance
CityParis
Period5/30/106/2/10

Fingerprint

Electroforming
Thermal effects
Data storage equipment
Electrodes
Temperature
RRAM

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Liu, M., Liu, Q., Long, S., & Guan, W. (2010). Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems (pp. 1-4). [5537156] (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems). https://doi.org/10.1109/ISCAS.2010.5537156
Liu, Ming ; Liu, Qi ; Long, Shibing ; Guan, Weihua. / Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM. ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. pp. 1-4 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems).
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title = "Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM",
abstract = "We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.",
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Liu, M, Liu, Q, Long, S & Guan, W 2010, Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM. in ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems., 5537156, ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, pp. 1-4, 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems, ISCAS 2010, Paris, France, 5/30/10. https://doi.org/10.1109/ISCAS.2010.5537156

Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM. / Liu, Ming; Liu, Qi; Long, Shibing; Guan, Weihua.

ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. p. 1-4 5537156 (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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PY - 2010/8/31

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N2 - We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

AB - We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode. The Cu/ZrO2:Cu/Pt shows excellent nonpolar resistive switching behaviors, such as free-electroforming, high ON/OFF resistance ratio (10 6), fast Set/Reset speed (50 ns/100 ns), and reliable data retention (>10 years). The temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state. Further analysis reveals that the physical origin of this metallic filament is the nanoscale Cu conductive filament. On this basis, we propose that the set process and the reset process stem from the electrochemical reactions in the filament, in which a thermal effect is greatly involved.

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Liu M, Liu Q, Long S, Guan W. Formation and Annihilation of Cu conductive filament in the nonpolar resistive switching Cu/ZrO2:Cu/Pt ReRAM. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 2010. p. 1-4. 5537156. (ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems). https://doi.org/10.1109/ISCAS.2010.5537156