Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal

S. Rangan, S Ashok, G. Chen, D. Theodore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nanocavities in Si formed by He ion implantation anneal are of interest for impurity gettering in Si technology, localized lifetime control in power devices, and in layer splitting techniques used in water bonding. We have found that sequential thermal anneal is essential to obtain multiple cavity layers with cascade He implants (40-160 keV, 2×1015-4×1016 cm-2). This behavior is related to the vacancy generation process necessary for cavity formation. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Photoluminescence (PL) spectra at 77 K reveal a peak at 0.8 eV for all the He-implanted and annealed samples, attributable to band bending around the cavity interfaces. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

Original languageEnglish (US)
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, Paul Yu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1360-1365
Number of pages6
ISBN (Electronic)0780365208, 9780780365209
DOIs
StatePublished - Jan 1 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: Oct 22 2001Oct 25 2001

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume2

Other

Other6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
CountryChina
CityShanghai
Period10/22/0110/25/01

Fingerprint

Helium
Silicon
Ion implantation
Defects
Deep level transient spectroscopy
Vacancies
Photoluminescence
Capacitance
Impurities
Transmission electron microscopy
Geometry
Electrons
Water
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Rangan, S., Ashok, S., Chen, G., & Theodore, D. (2001). Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal. In H. Iwai, X-P. Qu, B-Z. Li, G-P. Ru, & P. Yu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 1360-1365). [982155] (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.982155
Rangan, S. ; Ashok, S ; Chen, G. ; Theodore, D. / Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Xin-Ping Qu ; Bing-Zong Li ; Guo-Ping Ru ; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 1360-1365 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).
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Rangan, S, Ashok, S, Chen, G & Theodore, D 2001, Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal. in H Iwai, X-P Qu, B-Z Li, G-P Ru & P Yu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 982155, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 1360-1365, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 10/22/01. https://doi.org/10.1109/ICSICT.2001.982155

Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal. / Rangan, S.; Ashok, S; Chen, G.; Theodore, D.

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Xin-Ping Qu; Bing-Zong Li; Guo-Ping Ru; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 1360-1365 982155 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal

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AU - Ashok, S

AU - Chen, G.

AU - Theodore, D.

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N2 - Nanocavities in Si formed by He ion implantation anneal are of interest for impurity gettering in Si technology, localized lifetime control in power devices, and in layer splitting techniques used in water bonding. We have found that sequential thermal anneal is essential to obtain multiple cavity layers with cascade He implants (40-160 keV, 2×1015-4×1016 cm-2). This behavior is related to the vacancy generation process necessary for cavity formation. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Photoluminescence (PL) spectra at 77 K reveal a peak at 0.8 eV for all the He-implanted and annealed samples, attributable to band bending around the cavity interfaces. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

AB - Nanocavities in Si formed by He ion implantation anneal are of interest for impurity gettering in Si technology, localized lifetime control in power devices, and in layer splitting techniques used in water bonding. We have found that sequential thermal anneal is essential to obtain multiple cavity layers with cascade He implants (40-160 keV, 2×1015-4×1016 cm-2). This behavior is related to the vacancy generation process necessary for cavity formation. Transmission electron microscopy data reveal that, under isothermal anneal, the cavity shape changes from a distinct, aligned hexagonal geometry to a rounded spheroidal shape with increasing anneal time. Photoluminescence (PL) spectra at 77 K reveal a peak at 0.8 eV for all the He-implanted and annealed samples, attributable to band bending around the cavity interfaces. Deep level transient spectroscopy (DLTS) measurements of the cavity region show broad minority carrier (electron in p-type Si) peaks indicative of the presence of defect clusters. Unusual capacitance-temperature (C-T) characteristics with steps and hysterisis are also seen, reflecting metastable behavior arising from change in structural configuration of the cavity defects.

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Rangan S, Ashok S, Chen G, Theodore D. Formation and characterization of multi-layered nanocavities in silicon with cascade helium implantation/anneal. In Iwai H, Qu X-P, Li B-Z, Ru G-P, Yu P, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 1360-1365. 982155. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). https://doi.org/10.1109/ICSICT.2001.982155