Formation mechanism of highly [0 0 1]c textured Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 relaxor ferroelectric ceramics with giant piezoelectricity

Yunfei Chang, Yuan Sun, Jie Wu, Xiaohui Wang, Shantao Zhang, Bin Yang, Gary L. Messing, Wenwu Cao

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We investigated the synthesis mechanism and giant piezoelectricity of highly [0 0 1]c textured Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor based ferroelectric ceramics (texture fraction ~94%) with BaTiO3 (BT) templates. The onset of texture occurred at ~88% relative density (RD), and rapid increase in texture fraction happened with RD > 94%. A PbO-rich grain boundary liquid of ~6-13 nm thickness, detected at oriented crystalline interfaces, facilitated epitaxial nucleation and subsequent [0 0 1]PIN-PMN-PT||[0 0 1]BT growth of textured grains on BT templates. Interfaces between BT templates and PIN-PMN-PT textured grains were found to be coherent and defect-free at the atomic scale, and there was almost no barium diffusion across the interfaces during the texturing process. Nanodomains were clearly visible in the oriented grains. [0 0 1]c poling ordered the domain structures of textured ceramics and resulted in a more uniform domain size of several hundred nanometers. The textured ternary PIN-PMN-PT ceramics exhibited ~200% improvement in piezoelectric response relative to their random counterparts, as a result of their piezoelectric anisotropy and engineered domain status along with higher mobility of domain walls.

Original languageEnglish (US)
Pages (from-to)1973-1981
Number of pages9
JournalJournal of the European Ceramic Society
Issue number8
StatePublished - Jul 1 2016

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry


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