Formation of thermal decomposition cavities in physical vapor transport of silicon carbide

Edward K. Sanchez, Thomas Kuhr, Volker D. Heydemann, David W. Snyder, Gregory S. Rohrer, Marek Skowronski

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The relationship between seed mounting and the formation of thermal decomposition cavities in physical vapor transport grown silicon carbide was investigated. Scanning electron microscopy, energy dispersive x-ray spectroscopy, Auger electron spectroscopy, and optical microscopy were used to characterize thermal decomposition cavities at various stages of their development. The observations indicate that the attachment layer that holds the seed to the graphite crucible lid frequently contains voids. The seed locally decomposes at void locations and Si-bearing species are transported through the void. The decomposition produces a capacity in the seed; the silicon is deposited on and diffuses into the graphite lid. The formation of thermal decomposition cavities can be suppressed by the application of a diffusion barrier on the seed crystal backside.

Original languageEnglish (US)
Pages (from-to)347-352
Number of pages6
JournalJournal of Electronic Materials
Volume29
Issue number3
DOIs
StatePublished - Jan 1 2000

Fingerprint

Silicon carbide
silicon carbides
thermal decomposition
Seed
seeds
Pyrolysis
Vapors
vapors
cavities
Graphite
voids
Bearings (structural)
graphite
Diffusion barriers
Crucibles
Silicon
Auger electron spectroscopy
Mountings
Optical microscopy
crucibles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Sanchez, Edward K. ; Kuhr, Thomas ; Heydemann, Volker D. ; Snyder, David W. ; Rohrer, Gregory S. ; Skowronski, Marek. / Formation of thermal decomposition cavities in physical vapor transport of silicon carbide. In: Journal of Electronic Materials. 2000 ; Vol. 29, No. 3. pp. 347-352.
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Formation of thermal decomposition cavities in physical vapor transport of silicon carbide. / Sanchez, Edward K.; Kuhr, Thomas; Heydemann, Volker D.; Snyder, David W.; Rohrer, Gregory S.; Skowronski, Marek.

In: Journal of Electronic Materials, Vol. 29, No. 3, 01.01.2000, p. 347-352.

Research output: Contribution to journalArticle

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