Forward and backward diodelike rectifying properties of the heterojunctions composed of La1-x Srx Co O3-δ and 0.7 wt % Nb-doped SrTi O3

G. Li, T. F. Zhou, D. D. Hu, Y. P. Yao, Y. Hou, X. G. Li

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Heterojunctions composed of La1-x Srx Co O3-δ (x=0.4 and 0.5) and 0.7 wt % Nb-doped SrTi O3 were fabricated and exhibited good rectifying properties. The asymmetric current-voltage relations for the x=0.4 and x=0.5 junctions display opposite shapes: the former has a forward shape, while the latter shows a backward one. The x=0.4 junction can be viewed as a Schottky diode. For the x=0.5 junction, the forward bias currents show much less temperature dependence than the reverse ones and the reverse voltage Vchar, at which the bias current is 10 μA, displays a distinct change at the ferromagnetic transition temperature of the cobalt oxide of the junction. These observations in the x=0.5 junction can be understood by a nearly degenerate model together with its temperature-dependent magnetism.

Original languageEnglish (US)
Article number163114
JournalApplied Physics Letters
Volume91
Issue number16
DOIs
StatePublished - Oct 31 2007

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heterojunctions
cobalt oxides
electric potential
Schottky diodes
transition temperature
temperature dependence
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{eee094683c2641c69d58217aca4ad810,
title = "Forward and backward diodelike rectifying properties of the heterojunctions composed of La1-x Srx Co O3-δ and 0.7 wt {\%} Nb-doped SrTi O3",
abstract = "Heterojunctions composed of La1-x Srx Co O3-δ (x=0.4 and 0.5) and 0.7 wt {\%} Nb-doped SrTi O3 were fabricated and exhibited good rectifying properties. The asymmetric current-voltage relations for the x=0.4 and x=0.5 junctions display opposite shapes: the former has a forward shape, while the latter shows a backward one. The x=0.4 junction can be viewed as a Schottky diode. For the x=0.5 junction, the forward bias currents show much less temperature dependence than the reverse ones and the reverse voltage Vchar, at which the bias current is 10 μA, displays a distinct change at the ferromagnetic transition temperature of the cobalt oxide of the junction. These observations in the x=0.5 junction can be understood by a nearly degenerate model together with its temperature-dependent magnetism.",
author = "G. Li and Zhou, {T. F.} and Hu, {D. D.} and Yao, {Y. P.} and Y. Hou and Li, {X. G.}",
year = "2007",
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Forward and backward diodelike rectifying properties of the heterojunctions composed of La1-x Srx Co O3-δ and 0.7 wt % Nb-doped SrTi O3. / Li, G.; Zhou, T. F.; Hu, D. D.; Yao, Y. P.; Hou, Y.; Li, X. G.

In: Applied Physics Letters, Vol. 91, No. 16, 163114, 31.10.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Forward and backward diodelike rectifying properties of the heterojunctions composed of La1-x Srx Co O3-δ and 0.7 wt % Nb-doped SrTi O3

AU - Li, G.

AU - Zhou, T. F.

AU - Hu, D. D.

AU - Yao, Y. P.

AU - Hou, Y.

AU - Li, X. G.

PY - 2007/10/31

Y1 - 2007/10/31

N2 - Heterojunctions composed of La1-x Srx Co O3-δ (x=0.4 and 0.5) and 0.7 wt % Nb-doped SrTi O3 were fabricated and exhibited good rectifying properties. The asymmetric current-voltage relations for the x=0.4 and x=0.5 junctions display opposite shapes: the former has a forward shape, while the latter shows a backward one. The x=0.4 junction can be viewed as a Schottky diode. For the x=0.5 junction, the forward bias currents show much less temperature dependence than the reverse ones and the reverse voltage Vchar, at which the bias current is 10 μA, displays a distinct change at the ferromagnetic transition temperature of the cobalt oxide of the junction. These observations in the x=0.5 junction can be understood by a nearly degenerate model together with its temperature-dependent magnetism.

AB - Heterojunctions composed of La1-x Srx Co O3-δ (x=0.4 and 0.5) and 0.7 wt % Nb-doped SrTi O3 were fabricated and exhibited good rectifying properties. The asymmetric current-voltage relations for the x=0.4 and x=0.5 junctions display opposite shapes: the former has a forward shape, while the latter shows a backward one. The x=0.4 junction can be viewed as a Schottky diode. For the x=0.5 junction, the forward bias currents show much less temperature dependence than the reverse ones and the reverse voltage Vchar, at which the bias current is 10 μA, displays a distinct change at the ferromagnetic transition temperature of the cobalt oxide of the junction. These observations in the x=0.5 junction can be understood by a nearly degenerate model together with its temperature-dependent magnetism.

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