Forward and backward diodelike rectifying properties of the heterojunctions composed of La1-x Srx Co O3-δ and 0.7 wt % Nb-doped SrTi O3

G. Li, T. F. Zhou, D. D. Hu, Y. P. Yao, Y. Hou, X. G. Li

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Heterojunctions composed of La1-x Srx Co O3-δ (x=0.4 and 0.5) and 0.7 wt % Nb-doped SrTi O3 were fabricated and exhibited good rectifying properties. The asymmetric current-voltage relations for the x=0.4 and x=0.5 junctions display opposite shapes: the former has a forward shape, while the latter shows a backward one. The x=0.4 junction can be viewed as a Schottky diode. For the x=0.5 junction, the forward bias currents show much less temperature dependence than the reverse ones and the reverse voltage Vchar, at which the bias current is 10 μA, displays a distinct change at the ferromagnetic transition temperature of the cobalt oxide of the junction. These observations in the x=0.5 junction can be understood by a nearly degenerate model together with its temperature-dependent magnetism.

Original languageEnglish (US)
Article number163114
JournalApplied Physics Letters
Volume91
Issue number16
DOIs
StatePublished - Oct 31 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Forward and backward diodelike rectifying properties of the heterojunctions composed of La1-x Srx Co O3-δ and 0.7 wt % Nb-doped SrTi O3'. Together they form a unique fingerprint.

Cite this