Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping

Lucas Jay Passmore, K. Sarpatwari, Samia A. Suliman, Osama O. Awadelkarim, R. Ridley, G. Dolny, J. Michalowicz, C. T. Wu

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Low specific on-resistance, high packing densities, and large blocking voltage capabilities have all made U-shaped trench-gated metal-oxide-Si field-effect transistor (UMOSFET) the leading candidate in power electronic applications. However, hot carrier and Fowler Nordheim stresses are major reliability concerns for UMOSFETs. In studying the effects of these stresses on device lifetime, charge pumping (CP) has proven to be a versatile transistor characterization technique. For its application "conventional" CP, however, needs four terminal transistors and features the substrate current as its main output. Often a UMOSFET has only three terminals and no substrate contact is included in the device. We report on an adaptation of the CP technique, which renders it applicable on three-terminal UMOSFETs and other three-terminal transistors. The three-terminal CP is applied to n-channel UMOSFETs, and is used to evaluate the effects of electrical stresses applied to the UMOSFETs.

Original languageEnglish (US)
Pages (from-to)302-306
Number of pages5
JournalThin Solid Films
Volume504
Issue number1-2
DOIs
StatePublished - May 10 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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