Frequency dependent electrical measurements of amorphous GeSbSe chalcogenide thin films

M. Mirsaneh, E. Furman, J. V. Ryan, Michael T. Lanagan, C. G. Pantano

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A commercial bulk chalcogenide glass (Ge28 Sb12 Se60) was used as a source to fabricate amorphous thin films via thermal evaporation technique. At low frequencies (<1 MHz) impedance spectroscopy was performed to measure electrical properties. To measure ac conductivity at microwave frequencies, a split resonance cavity technique was applied for which a model based on parallel arrangement of substrate and film capacitors was developed. This model was used to extract tan δ and ac conductivity of the films. Microwave ac conductivity was correlated with the extrapolated low frequency conductivity data confirming applicability of the universal law commonly observed in amorphous semiconductors.

Original languageEnglish (US)
Article number112907
JournalApplied Physics Letters
Volume96
Issue number11
DOIs
StatePublished - Mar 26 2010

Fingerprint

electrical measurement
conductivity
thin films
low frequencies
amorphous semiconductors
microwave frequencies
capacitors
electrical properties
evaporation
impedance
microwaves
cavities
glass
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Mirsaneh, M. ; Furman, E. ; Ryan, J. V. ; Lanagan, Michael T. ; Pantano, C. G. / Frequency dependent electrical measurements of amorphous GeSbSe chalcogenide thin films. In: Applied Physics Letters. 2010 ; Vol. 96, No. 11.
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Frequency dependent electrical measurements of amorphous GeSbSe chalcogenide thin films. / Mirsaneh, M.; Furman, E.; Ryan, J. V.; Lanagan, Michael T.; Pantano, C. G.

In: Applied Physics Letters, Vol. 96, No. 11, 112907, 26.03.2010.

Research output: Contribution to journalArticle

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