Frequency shift of Raman modes due to an applied electric field and domain inversion in LiNbO3

Greg Stone, Brian Knorr, Venkatraman Gopalan, Volkmar Dierolf

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report changes in the frequency of Raman modes in lithium niobate that are observed under the application of external applied electric fields and after domain inversion. Inspection of the Raman peaks reveals that after domain inversion, the internal field of the crystal is reduced. A comparison of the respective frequency shifts for the different Raman modes indicates that this change in the local internal field is not limited to the ferroelectric axis, but the fields orthogonal to the ferroelectric axis also change. The Raman modes also reveal that the strength of the internal field is dependent on the concentration of intrinsic defects present in the crystal.

Original languageEnglish (US)
Article number134303
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number13
DOIs
StatePublished - Oct 13 2011

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frequency shift
Ferroelectric materials
Electric fields
inversions
Crystals
electric fields
Lithium
Inspection
lithium niobates
Defects
crystals
inspection
defects
lithium niobate

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{7bd21754e2de44d9a55c55c3b45e853b,
title = "Frequency shift of Raman modes due to an applied electric field and domain inversion in LiNbO3",
abstract = "We report changes in the frequency of Raman modes in lithium niobate that are observed under the application of external applied electric fields and after domain inversion. Inspection of the Raman peaks reveals that after domain inversion, the internal field of the crystal is reduced. A comparison of the respective frequency shifts for the different Raman modes indicates that this change in the local internal field is not limited to the ferroelectric axis, but the fields orthogonal to the ferroelectric axis also change. The Raman modes also reveal that the strength of the internal field is dependent on the concentration of intrinsic defects present in the crystal.",
author = "Greg Stone and Brian Knorr and Venkatraman Gopalan and Volkmar Dierolf",
year = "2011",
month = "10",
day = "13",
doi = "10.1103/PhysRevB.84.134303",
language = "English (US)",
volume = "84",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "13",

}

Frequency shift of Raman modes due to an applied electric field and domain inversion in LiNbO3. / Stone, Greg; Knorr, Brian; Gopalan, Venkatraman; Dierolf, Volkmar.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 13, 134303, 13.10.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Frequency shift of Raman modes due to an applied electric field and domain inversion in LiNbO3

AU - Stone, Greg

AU - Knorr, Brian

AU - Gopalan, Venkatraman

AU - Dierolf, Volkmar

PY - 2011/10/13

Y1 - 2011/10/13

N2 - We report changes in the frequency of Raman modes in lithium niobate that are observed under the application of external applied electric fields and after domain inversion. Inspection of the Raman peaks reveals that after domain inversion, the internal field of the crystal is reduced. A comparison of the respective frequency shifts for the different Raman modes indicates that this change in the local internal field is not limited to the ferroelectric axis, but the fields orthogonal to the ferroelectric axis also change. The Raman modes also reveal that the strength of the internal field is dependent on the concentration of intrinsic defects present in the crystal.

AB - We report changes in the frequency of Raman modes in lithium niobate that are observed under the application of external applied electric fields and after domain inversion. Inspection of the Raman peaks reveals that after domain inversion, the internal field of the crystal is reduced. A comparison of the respective frequency shifts for the different Raman modes indicates that this change in the local internal field is not limited to the ferroelectric axis, but the fields orthogonal to the ferroelectric axis also change. The Raman modes also reveal that the strength of the internal field is dependent on the concentration of intrinsic defects present in the crystal.

UR - http://www.scopus.com/inward/record.url?scp=80155172918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80155172918&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.84.134303

DO - 10.1103/PhysRevB.84.134303

M3 - Article

AN - SCOPUS:80155172918

VL - 84

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 13

M1 - 134303

ER -